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Author

Sho Nagatomo

ORCID: 0009-0009-3660-7422
Observed ORCID: 0009-0009-3660-7422
OpenAlex ID: A5071898959
Near-infrared laser annealing of Ge layers epitaxially grown on Si for high-performance photonic devices
2017 · Sho Nagatomo, Yasuhiko Ishikawa, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15
Post-Growth Laser Annealing for High-Performance Ge Photodiodes on Si
2014 · Yuta Kawamata, Sho Nagatomo, et al. · ECS Transactions · 2
Recrystallization kinetics of fully amorphized C3H5-molecular-ion-implanted silicon substrate surface
2025 · Koji Kobayashi, Ryosuke Okuyama, et al. · MRS Advances · 1
Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate
2024 · Koji Kobayashi, Ryosuke Okuyama, et al. · Crystals · 1
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Boosting CMOS Image Sensors: Exploring Silicon Hydride and Hydrocarbon Molecular Ion Implanted in Epitaxial Wafers
2026 · Ayumi Onaka-Masada, Ryo Hirose, et al. · Sensors
Impact of Cumulative Pulsed Laser Irradiation on Recrystallization of Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface
2025 · Koji Kobayashi, Ryosuke Okuyama, et al. · International Workshop on Junction Technology
Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the Pn-Junction Diode Fabrication Process
2025 · Sho Nagatomo, Takeshi Kadono, et al. · International Workshop on Junction Technology
Novel Production Concept of CH2F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3D-Stacked CMOS Image Sensors
2025 · Ryo Hirose, Koji Kobayashi, et al. · International Workshop on Junction Technology
Metallic Impurity Gettering Behavior of Hydrocarbon-Molecular-Ion-Implanted Epitaxial Silicon Wafer During the pn-Junction Diode Fabrication Process
2025 · Sho Nagatomo, Takeshi Kadono, et al. · IEEE Journal of the Electron Devices Society
Novel Production Concept of CH 2 F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3-D-Stacked CMOS Image Sensors
2025 · Ryo Hirose, Koji Kobayashi, et al. · IEEE Journal of the Electron Devices Society
High-performance Ge-on-Si Near-infrared Photodiodes
2016 · Yasuhiko Ishikawa, Yuji Miyasaka, et al. · IEICE Technical Report; IEICE Tech. Rep.
Post-Growth Laser Annealing for High-Performance Ge Photodiodes on Si
2014 · Yuta Kawamata, Sho Nagatomo, et al. · ECS Meeting Abstracts
High-performance Ge-on-Si pin photodiodes using a laser annealing process (2)
2014 · Sho Nagatomo, Shinya Kikuta, et al. · The Japan Society of Applied Physics
Effect of post-growth annealing on thin-film Ge pin photodiodes on Si
2014 · Sho Nagatomo · The Japan Society of Applied Physics
Works count: 14
Citation count: 19
H-index: 2
I10-index: 1
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