Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Takeki Ninomiya
Observed names:
Ninomiya, Takeki,
T Ninomiya,
T. Ninomiya,
Takeki NINOMIYA
Institutions:
Research Association for Advanced Systems,
The University of Tokyo
Observed institutions:
Panasonic (Japan),
Kyoto University,
Seisen University,
Research Association for Advanced Systems,
Nagoya University,
The University of Tokyo
show all 6
ORCID:
0009-0008-0630-1353
Observed ORCID:
0009-0008-0630-1353
OpenAlex ID:
A5072099537
Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
2008
·
Z. Wei
, Y. Kanzawa
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
359
Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model
2011
·
Z. Wei
, T. Takagi
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
130
Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current
2013
·
Takeki Ninomiya
, Zhigiang Wei
, et al.
·
IEEE Transactions on Electron Devices
·
127
Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM
2013
·
A. Kawahara
, K. Kawai
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
52
Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM
2013
·
Takeki Ninomiya
, Shunsaku Muraoka
, et al.
·
IEEE Electron Device Letters
·
49
Retention Model for High-Density ReRAM
2012
·
Z. Wei
, T. Takagi
, et al.
·
IEEE International Memory Workshop (IMW)
·
39
Comprehensive understanding of conductive filament characteristics and retention properties for highly reliable ReRAM
2013
·
S. Muraoka
, Takeki Ninomiya
, et al.
·
Symposium on VLSI Technology
·
33
Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation
2012
·
T. Ninomiya
, T. Takagi
, et al.
·
Symposium on VLSI Technology
·
29
Conductive Filament Expansion in TaOxBipolar Resistive Random Access Memory during Pulse Cycling
2013
·
Takeki Ninomiya
, Koji Katayama
, et al.
·
Japanese Journal of Applied Physics
·
22
PDF
Hydrophilic Bonding of SiO2/SiO2 and Cu/Cu using Sequential Plasma Activation
2023
·
Kai Takeuchi
, Takeki Ninomiya
, et al.
·
ECS Transactions
·
12
Consideration of conductive filament for realization of low-current and highly-reliable TaOx ReRAM
2013
·
R. Yasuhara
, T. Ninomiya
, et al.
·
IEEE International Memory Workshop (IMW)
·
12
Quantitative method for estimating characteristics of conductive filament in ReRAM
2014
·
Zhiqiang Wei
, Ryutaro Yasuhara
, et al.
·
IEEE International Symposium on Circuits and Systems proceedings
·
10
High Thermal Conductivity AlN Films for Advanced 3D Chiplets
2024
·
T. Takagi
, T. Ninomiya
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
9
First-principles study of defect equilibria in lithium zinc nitride
2007
·
K Toyoura
, F Oba
, et al.
·
Journal of Physics Condensed Matter
·
6
Switching and reliability mechanisms for ReRAM
2014
·
Zhiqiang Wei
, Takeki Ninomiya
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
5
Hydrophilic Bonding of SiO2/SiO2 and Cu/Cu using Sequential Plasma Activation
2023
·
Kai Takeuchi
, Takeki Ninomiya
, et al.
·
ECS Meeting Abstracts
·
2
AlN Gap-Fill Process by Aerosol Deposition Method for Application in 3D-IC Packaging
2025
·
Takeki Ninomiya
, Takeshi Takagi
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
1
Introduction of thick AlN coating on Si for 3D-IC thermal management
2024
·
Takeki Ninomiya
, Takeshi Takagi
, et al.
·
Japanese Journal of Applied Physics
·
1
Switching Mechanism of TaOx ReRAM
2009
·
Z. Wei
, Y. Kanzawa
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
Deposition and integration of aluminum nitride as interlayer dielectric for heat dissipation of 3D-ICs
2025
·
T. Ninomiya
, T. Takagi
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Aluminum Nitride Interlayer Dielectric Integration for Effective Heat Dissipation of 3D-IC
2025
·
Takeki Ninomiya
, Takeshi Takagi
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
Introduction of thick AlN coating on Si for 3D-IC thermal management
2024
·
Takeki Ninomiya
, Takeshi Takagi
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
酸化物の材料設計と信頼性モデリングに基づく抵抗変化型メモリの量産化
2016
·
二宮, 健生
, Ninomiya, Takeki
·
Institutional Repositories DataBase (IRDB)
PDF
Theoretical and Experimental Approaches to Select Resistive Switching Material
2015
·
Takeki NINOMIYA
, Zhiqiang WEI
, et al.
·
IEICE Transactions on Electronics
Data Retention of TaO x ReRAM in Low Current Operation and after Cycling
2014
·
Takeki Ninomiya
·
The Japan Society of Applied Physics
Show more works
View as search
Works count:
25
Citation count:
899
H-index:
11
I10-index:
12
Year
Topic
Type
