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Toshikazu Takeuchi

Observed names: T Takeuchi, T. Takeuchi
OpenAlex ID: A5072188797
Observation of Ga antisite defect in electron-irradiated semi-insulating GaAs by photoluminescence
1992 · K. Kuriyama, K. Yokoyama, et al. · Applied Physics Letters · 24
Stacked GaAs multi-quantum wires grown on vicinal GaAs(110) surfaces by molecular beam epitaxy
1998 · Takehiko Kato, Toshikazu Takeuchi, et al. · Applied Physics Letters · 18
Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth
1997 · Misaichi Takeuchi, Toshikazu Takeuchi, et al. · Superlattices and Microstructures · 18
Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE
1996 · Hisao Nakashima, Misaichi Takeuchi, et al. · Physica B Condensed Matter · 7
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
1998 · Hisao Nakashima, Takehiko Kato, et al. · Materials Science and Engineering B · 2
Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy
1997 · H. Nakashima, T. Takeuchi, et al. · Superlattices and Microstructures · 2
μSR study on SDW transition in Ce(Ru0.95Rh0.05)2Si2
2000 · Y Yamamoto, Y Miyako, et al. · Physica B Condensed Matter · 1
A Crossover Effect Effect of the 5f Electrons of Uranium Compounds: from Itinerant to Localized, With Increasing Temperature
2006 · Y. Onuki, A. Galatanu, et al. · Royal Society of Chemistry eBooks
Stacked Multi-Quantum-Wires Grown on Vicinal GaAs(110) Surfaces by MBE
1996 · Takehiko Kato, Toshikazu Takeuchi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 9
Citation count: 72
H-index: 4
I10-index: 3
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