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Geetanjali Vashisht

ORCID: 0000-0002-8377-5973
Observed ORCID: 0000-0002-8377-5973
OpenAlex ID: A5072266655
Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence
2017 · S. Haldar, V. K. Dixit, et al. · Scientific Reports · 31
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Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy
2019 · R. Roychowdhury, V.K. Dixit, et al. · Applied Surface Science · 19
Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors
2016 · Geetanjali Vashisht, V. K. Dixit, et al. · Journal of Applied Physics · 17
Development of a simple cost-effective maskless-photolithography system
2019 · S. Haldar, Geetanjali Vashisht, et al. · AIP conference proceedings · 10
Effect of disorders on the optical properties of excitons in InAsP/InP quantum wells investigated by magneto-photoluminescence spectroscopy
2018 · Geetanjali Vashisht, V. K. Dixit, et al. · Journal of the Optical Society of America B · 9
The effect of magnetic field on free and bound exciton luminescence in GaAs/AlGaAs multiple quantum well structures: a quantitative study on the estimation of ultra-low disorder
2017 · S Haldar, V K Dixit, et al. · Journal of Physics D Applied Physics · 8
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Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs
2022 · Geetanjali Vashisht, S Porwal, et al. · Journal of Physics D Applied Physics · 7
Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy
2018 · S. Haldar, V. K. Dixit, et al. · Journal of Applied Physics · 6
A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy
2018 · S. Haldar, A. Banerjee, et al. · Journal of Luminescence · 3
Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures
2024 · Geetanjali Vashisht, R. Roychowdhury, et al. · Surfaces and Interfaces · 2
Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001)
2023 · Rahul Aggarwal, V.K. Dixit, et al. · Surfaces and Interfaces · 2
Electric and magnetic field effects on the exciton localization in a modulation doped InGaAs/GaAs quantum well
2020 · Geetanjali Vashisht, S. Haldar, et al. · AIP conference proceedings · 1
Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations
2019 · S. Haldar, Geetanjali Vashisht, et al. · Journal of Applied Physics · 1
Control of surface and interface state recombination in ZrO2/GaAs heterostructure by dual ion beam sputtering deposition
2026 · Deepesh Nimje, Venus, et al. · Applied Surface Science
Identification of transition metals and their alloys using a synchrotron X-ray source and a MOVPE grown GaAs p-i-n detector
2025 · Geetanjali Vashisht, Payal Taya, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Anisotropic magnetic properties of excitons in GaAs multiple quantum wells
2019 · S. Haldar, A. Banerjee, et al. · Superlattices and Microstructures
Role of surface and interface states on the performance of GaAs based photodetectors
2019 · Heena Darji, Geetanjali Vashisht, et al. · AIP conference proceedings
Works count: 17
Citation count: 116
H-index: 7
I10-index: 4
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