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Author

Gaobo Xu

Observed names: G. B. Xu, G. Xu, Gao-Bo Xu, Gao-bo Xu, Gao‐Bo Xu, Xu, Gaobo
Observed institutions: Southwest University, Chinese Academy of Sciences, Institute of Microelectronics, Institute of High Energy Physics, University of Chinese Academy of Sciences, The University of Texas at Austin
ORCID: 0000-0002-4278-251X
Observed ORCID: 0000-0002-4278-251X
OpenAlex ID: A5072583150
FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf 0.5 Zr 0.5 O 2
2019 · Zhaohao Zhang, Gaobo Xu, et al. · IEEE Electron Device Letters · 85
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
2021 · Qingzhu Zhang, Jie Gu, et al. · Nanomaterials · 78
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Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current
2020 · Weijun Cheng, Renrong Liang, et al. · IEEE Journal of the Electron Devices Society · 60
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FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin
2016 · Qingzhu Zhang, Huaxiang Yin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45
Mechanism Analysis of Ultralow Leakage and Abnormal Instability in InGaZnO Thin-Film Transistor Toward DRAM
2022 · Gangping Yan, Hong Yang, et al. · IEEE Transactions on Electron Devices · 43
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process
2021 · Yongkui Zhang, Xuezheng Ai, et al. · IEEE Transactions on Electron Devices · 33
Record 7(N)+7(P) Multiple V T s Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique
2022 · Jiaxin Yao, Yanzhao Wei, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
First Demonstration of True 4-bit Memory with Record High Multibit Retention >103s and Read Window >105 by Hydrogen Self-Adaptive-Doping for IGZO DRAM Arrays
2023 · Gangping Yan, Yanna Luo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors
2021 · Jie Gu, Qingzhu Zhang, et al. · IEEE Journal of the Electron Devices Society · 30
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Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation
2020 · Guoliang Tian, Jinshun Bi, et al. · Semiconductor Science and Technology · 27
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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
2021 · Jie Gu, Qingzhu Zhang, et al. · Nanomaterials · 25
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A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors
2022 · Zhaohao Zhang, Yanna Luo, et al. · ACS Applied Materials & Interfaces · 24
Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application
2017 · Ying-Chen Chen, Chih-Yang Lin, et al. · Journal of Physics D Applied Physics · 24
Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate
2008 · Qiuxia Xu, Gaobo Xu, et al. · Applied Physics Letters · 24
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
2023 · Zhaohao Zhang, Guoliang Tian, et al. · Science China Information Sciences · 23
Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes
2022 · Zhaohao Zhang, Fan Zhang, et al. · IEEE Electron Device Letters · 23
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
2017 · Yannan Xu, Jinshun Bi, et al. · Science China Information Sciences · 23
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor
2020 · Gangping Yan, Jinshun Bi, et al. · IEEE Access · 22
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An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors
2023 · Zhaohao Zhang, Shujuan Mao, et al. · IEEE Transactions on Electron Devices · 21
Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALD
2022 · Renren Xu, Jiaxin Yao, et al. · IEEE Transactions on Electron Devices · 21
Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3Trilayer Structure
2017 · J. S. Bi, Y. N. Xu, et al. · IEEE Transactions on Nuclear Science · 21
Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field‐effect transistors using 3‐nm ferroelectric Hf 0.5 Zr 0.5 O 2
2024 · Zhao‐Hao Zhang, Yan‐Na Luo, et al. · Rare Metals · 19
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Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K
2024 · Jianjian Wang, Jinshun Bi, et al. · Electronics · 18
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Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing
2022 · Biyao Zhao, Yunting Yan, et al. · Nanomaterials · 18
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Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Devices
2022 · Jiajia Tian, Yujuan He, et al. · ECS Journal of Solid State Science and Technology · 17
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Works count: 143
Citation count: 1,308
H-index: 21
I10-index: 42
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