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Binit Syamal

Observed names: B Syamal, B. Syamal, Syamal, Binit
ORCID: 0000-0003-2564-4294
Observed ORCID: 0000-0003-2564-4294
OpenAlex ID: A5073023470
Influence of Channel and Gate Engineering on the Analog and RF Performance of DG MOSFETs
2010 · N. Mohankumar, Binit Syamal, et al. · IEEE Transactions on Electron Devices · 209
Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- $k$ Spacer for Low Power Applications
2012 · Kalyan Koley, Arka Dutta, et al. · IEEE Transactions on Electron Devices · 65
A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression
2014 · Junbin Zhang, Binit Syamal, et al. · IEEE Transactions on Electron Devices · 45
A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects
2016 · Binit Syamal, Xing Zhou, et al. · IEEE Transactions on Electron Devices · 41
Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions
2012 · Kalyan Koley, Binit Syamal, et al. · Microelectronics Reliability · 37
Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications
2009 · N. Mohankumar, Binit Syamal, et al. · Microelectronics Reliability · 36
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
2015 · M. J. Anand, G. I. Ng, et al. · Applied Physics Letters · 26
Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress
2015 · Mulagumoottil Jesudas Anand, Geok Ing Ng, et al. · Applied Physics Express · 19
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A surface potential based drain current model for asymmetric double gate MOSFETs
2010 · Pradipta Dutta, Binit Syamal, et al. · Solid-State Electronics · 16
RF parameter extraction of Bulk FinFET: A non quasi static approach
2010 · Atanu Kundu, Binit Syamal, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 12
Effect of single HALO doped channel in Tunnel FETs: A 2-D modeling study
2010 · B Syamal, C Bose, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 12
A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs
2014 · Pradipta Dutta, Binit Syamal, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 8
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs
2011 · Srabanti Pandit, Binit Syamal, et al. · Solid-State Electronics · 7
Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs
2017 · Pradipta Dutta, Binit Syamal, et al. · Pramana · 5
Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well
2014 · Arjun Ajaykumar, Zhou Xing, et al. · European Solid-State Device Research Conference · 5
Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach
2009 · P. Roy, B. Syamal, et al. · International Conference on Emerging Trends in Electronic and Photonic Devices & Systems (ELECTRO) · 5
Performance and optimisation of dual material gate short channel BULK MOSFETs for analogue/mixed signal applications
2009 · N. Mohankumar, Binit Syamal, et al. · International Journal of Electronics · 5
Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security
2026 · Yuxuan He, Aniruddh Holemadlu, et al. · IEEE Journal of the Electron Devices Society · 4
Reduction of Current Collapse in GaN (MIS)-HEMTs Using Dual Material Gate
2019 · Binit Syamal, Siau Ben Chiah, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 4
Quasi-2D Surface-Potential-Based Critical Length for Drift-Diffusion
2016 · Arjun Ajaykumar, Xing Zhou, et al. · IEEE Electron Device Letters · 4
GaN HEMT compact model for circuit simulation
2015 · Binit Syamal, Siau Ben Chiah, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 4
Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
2012 · Xing Zhou, Junbin Zhang, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 4
Noise performance of Gate engineered double gate MOSFETs for analog and RF applications
2010 · N. Mohankumar, Binit Syamal, et al. · International Conference on Electrical and Computer Engineering (ICECE) · 4
Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs
2017 · Arjun Ajaykumar, Xing Zhou, et al. · IEEE Transactions on Electron Devices · 3
Unified drain current model for independently driven double gate MOSFETs
2010 · Binit Syamal, C. K. Sarkar, et al. · 3
Works count: 50
Citation count: 605
H-index: 11
I10-index: 11
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