Author

Jinfu Lin

Observed names: J Lin, J. Lin, J. Y. Lin, J.Y. Lin, Jin-Fu Lin

Observed institutions: Xidian University, United Microelectronics (Taiwan), National Laboratory of Solid State Microstructures, National Yunlin University of Science and Technology, United Microelectronics (United States), Nanjing University, Minnan Normal University

ORCID: 0000-0001-5070-651X

Observed ORCID: 0000-0001-5070-651X

OpenAlex ID: A5073310578

Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

2007 · F. M. Yang, T. C. Chang, et al. · Applied Physics Letters · 61

Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

2007 · F. M. Yang, T. C. Chang, et al. · Applied Physics Letters · 59

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

2020 · Lei Wu, Hongxia Liu, et al. · Nanomaterials · 51

PDF

Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO₂/Ti Memristor

2021 · Lei Wu, Hongxia Liu, et al. · IEEE Transactions on Electron Devices · 44

Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

2021 · Jinfu Lin, Shulong Wang, et al. · Electronics · 41

PDF

Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices

2007 · F. M. Yang, T. C. Chang, et al. · Applied Physics Letters · 37

Resistive switching and memory effects of AgI thin film

2007 · X F Liang, Y Chen, et al. · Journal of Physics D Applied Physics · 36

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

2021 · Jinfu Lin, Hongxia Liu, et al. · Crystals · 16

PDF

Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs

2019 · Jinfu Lin, Hongxia Liu, et al. · Electronics · 10

PDF

In Situ Selenization Engineered Dual Schottky Heterojunctions: A Novel Architecture for High‐Speed Broadband Photonic Communication Detector Arrays

2025 · Shaoqiu Ke, Mengyu Ge, et al. · Small · 9

Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application

2007 · F.M. Yang, T.C. Chang, et al. · Thin Solid Films · 8

Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor

2023 · Dong Wang, Hongxia Liu, et al. · Micromachines · 7

PDF

Research on electronic synaptic simulation of HfO2-based memristor by embedding Al2O3

2023 · Jinfu Lin, Hongxia Liu, et al. · Nanotechnology · 6

The Image Identification Application with HfO2-Based Replaceable 1T1R Neural Networks

2022 · Jinfu Lin, Hongxia Liu, et al. · Nanomaterials · 6

PDF

The MOSFET performance degrading induced by electric heating coupling under electromagnetic pulse environment

2018 · Jinfu Lin, Hongxia Liu, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 6

Polarization‐Encoded Transmission Enabled by PtSe 2 /Si PIN Photodetectors with Circular Groove Light‐Trapping Architecture

2025 · Mengyu Ge, Shaoqiu Ke, et al. · Advanced Functional Materials · 4

PDF

The Effect of Ion Irradiation Density on the Defect of Graphene: A Molecular Dynamics Study

2020 · Jinfu Lin, Shulong Wang, et al. · Crystals · 4

PDF

Simulation Analysis of the influence of electromagnetic Pulse Power on the performance degradation of CMOS Inverter

2021 · Jinfu Lin, Yanning Chen, et al. · CIE International Conference on Radar (RADAR) · 3

CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

2011 · Ming-yen Li, Jei-Ming Chen, et al. · IEEE Electron Device Letters · 3

Effect of the Electromagnetic Susceptibility of Metal Interconnects: A Simulation Study

2022 · Jinfu Lin, Shulong Wang, et al. · Journal of Physics Conference Series · 1

PDF

Bipolar resistive switching behaviours of perovskite CaBi4Ti4O15 thin films

2015 · J. Y. Lin, C. L. Wu · Materials Research Innovations · 1

A novel pre-clean process of BEOL barrier-seed process to enhance reliability performance of advanced 40nm node

2011 · Chun-Min Cheng, Chi-Mao Hsu, et al. · IEEE International Reliability Physics Symposium proceedings · 1

RF Noise Characteristics of High-k AlTiO[sub x] and Al[sub 2]O[sub 3] Gate Dielectrics

2002 · S. B. Chen, C. H. Huang, et al. · Journal of The Electrochemical Society

PDF

The Application of Low Temperature（ 850 ℃） Process to Fabrication of Mosfet and Tft

1995 · 林進福, Jinfu Lin, et al.

Works count: 24

Citation count: 414

H-index: 9

I10-index: 9