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Reinhard Stengl

Observed names: R Stengl, R. Stengl
OpenAlex ID: A5073317631
On the morphology and the electrochemical formation mechanism of mesoporous silicon
2000 · V Lehmann, R Stengl, et al. · Materials Science and Engineering B · 396
A Model for the Silicon Wafer Bonding Process
1989 · R. Stengl, T. Tan, et al. · Japanese Journal of Applied Physics · 306
SiGe bipolar technology for automotive radar applications
2004 · J. Bock, H. Schiffer, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 167
Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment
1988 · R. Stengl, K.-Y. Ahn, et al. · Japanese Journal of Applied Physics · 97
Causes and Prevention of Temperature-Dependent Bubbles in Silicon Wafer Bonding
1991 · Kiyoshi Mitani, Volker Lehmann, et al. · Japanese Journal of Applied Physics · 87
Optical shortpass filters based on macroporous silicon
2001 · Volker Lehmann, Reinhard Stengl, et al. · Applied Physics Letters · 82
Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions
1985 · R. Stengl, U. Gosele · Technical digest - International Electron Devices Meeting/Technical digest · 81
Variation of lateral doping as a field terminator for high-voltage power devices
1986 · R. Stengl, U. Gosele, et al. · IEEE Transactions on Electron Devices · 77
A model for multistep trap-assisted tunneling in thin high-k dielectrics
2005 · O. Blank, H. Reisinger, et al. · Journal of Applied Physics · 66
Bubble-Free Wafer Bonding of GaAs and InP on Silicon in a Microcleanroom
1989 · V. Lehmann, K. Mitani, et al. · Japanese Journal of Applied Physics · 56
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Sub 5 ps SiGe bipolar technology
2003 · J. Bock, H. Schafer, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
42 GHz static frequency divider in a Si/SiGe bipolar technology
2002 · M. Wurzer, T.F. Meister, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 45
3.3 ps SiGe bipolar technology
2005 · J. Bock, H. Schafer, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
Stability of interfacial oxide layers during silicon wafer bonding
1989 · K.-Y. Ahn, R. Stengl, et al. · Journal of Applied Physics · 39
Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers
1990 · K.-Y. Ahn, R. Stengl, et al. · Applied Physics A · 38
SiGe bipolar technology for mixed digital and analogue RF applications
2002 · J. Bbck, T.F. Meister, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
25 to 40 Gb/s Si ICs in selective epitaxial bipolar technology
1993 · A. Felder, R. Stengl, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 31
High-speed SiGe:C bipolar technology
2002 · J. Bock, H. Schafer, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
High-voltage planar junctions investigated by the OBIC method
1987 · R. Stengl · IEEE Transactions on Electron Devices · 21
Silicon wafer bonding: chemistry, elasto-mechanics, and manufacturing
2003 · R. Stengl, K. Mitani, et al. · IEEE SOS/SOI Technology Conference · 20
A 200-A/2000-V MOS-GTO with improved cell design
1992 · M. Stoisiek, K.G. Oppermann, et al. · IEEE Transactions on Electron Devices · 20
Semiconductor wafer bonding
1990 · V. Lehmann, I. W. K. Ong, et al. · Advanced Materials · 15
25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology
1993 · A. Felder, R. Stengl, et al. · Electronics Letters · 14
A large area MOS-GTO with wafer-repair technique
1987 · M. Stoisiek, M. Beyer, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Surface breakdown and stability of high-voltage planar junctions
1991 · R. Stengl, E. Falck · IEEE Transactions on Electron Devices · 13
Works count: 42
Citation count: 1,912
H-index: 20
I10-index: 29
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