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Author

Ton Kiers

Institution: ASML (Netherlands)
OpenAlex ID: A5073626759
SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
2017 · Joost Bekaert, Paolo Di Lorenzo, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 27
Investigating process variability at ppm level using advanced massive eBeam CD metrology and contour analysis
2019 · Bertrand Le-Gratiet, Olivier Mermet, et al. · Metrology, Inspection, and Process Control XXXVI · 22
Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension
2002 · James M. Holden, Thomas Gubiotti, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 19
Robust 2D patterns process variability assessment using CD-SEM contour extraction offline metrology
2017 · Amine Lakcher, Bertrand Le-Gratiet, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 14
Co-optimization of lithographic and patterning processes for improved EPE performance
2017 · Mark J. Maslow, Vadim Timoshkov, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 11
CD-SEM distortion quantification for EPE metrology and contour analysis
2017 · Harm Dillen, Ton Kiers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Translation of lithography variability into after-etch performance: monitoring of golden hotspot
2016 · Jo Finders, Ton Kiers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Total test repeatability: a new figure of merit for CD metrology tools
2004 · Hugo Cramer, Ton Kiers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
Considerations for pattern placement error correction toward 5nm node
2017 · Hidetami Yaegashi, Kenichi Oyama, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Application of optical CD for characterization of 70nm dense lines
2005 · Beverly Cheung, Mircea Dusa, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations
2021 · Adam Lyons, Luke Long, et al. · Extreme Ultraviolet (EUV) Lithography · 3
Holistic EPE measurement and qualification by large field of view (LFOV) contour-based metrology
2025 · Jing Guo, Tim Tang, et al. · Metrology, Inspection, and Process Control XXXVI · 2
Co-optimization of exposure dose and etch process for SAQP pitch walk control
2018 · Mark J. Maslow, Vadim Timoshkov, et al. · SPIE Optical Microlithography · 2
Translation of lithography variability into after-etch performance: monitoring of "golden" hotspot.
2016 · Finders Jo, Ton Kiers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Scatterometry based 65nm node CDU analysis and prediction using novel reticle measurement technique
2005 · Koen van Ingen Schenau, Peter Vanoppen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Reticle processing induced proximity effects
2002 · Maurice Janssen, Robert de Kruif, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Reticle error correction for lithography tool qualification benefits and limitations
2001 · Ton Kiers, Melchior Mulder, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Probing EUV resist defect detectability using a SEM simulation framework
2023 · Thomas I. Wallow, Aiqin Jiang, et al. · International Conference on Extreme Ultraviolet Lithography
Works count: 18
Citation count: 130
H-index: 6
I10-index: 5
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