Author

Éric Frayssinet

Observed names: E Frayssinet, E. Frayssinet, Eric Frayssinet, FRAYSSINET, ERIC, FRAYSSINET, Eric, Frayssinet Eric, Frayssinet, E, Frayssinet, E., Frayssinet, Eric, Frayssinet, Éric

Institutions: Centre National de la Recherche Scientifique, Université Côte d'Azur, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Observed institutions: Centre National de la Recherche Scientifique, Université de Montpellier, Université Côte d'Azur, Institut d'Astrophysique de Paris, Universidad de Cádiz, Columbia Region Healthcare Engineers Association, Institute of High Pressure Physics, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Université Montpellier 2, Communauté d'universités et d'établissements Université Côte d'Azur, Polish Academy of Sciences

ORCID: 0000-0003-3900-8440

Observed ORCID: 0000-0003-3900-8440

OpenAlex ID: A5074374021

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

2000 · E. Frayssinet, W. Knap, et al. · Applied Physics Letters · 136

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

2000 · M. Asif Khan, J. W. Yang, et al. · Applied Physics Letters · 103

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

2008 · T. D. Veal, P. D. C. King, et al. · Applied Physics Letters · 93

PDF

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

2002 · E. Frayssinet, B. Beaumont, et al. · MRS Internet Journal of Nitride Semiconductor Research · 80

PDF

Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption

2009 · F. Médard, J. Zuniga-Perez, et al. · Physical Review B · 60

PDF

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

2008 · Yvon Cordier, Jean-Christophe Moreno, et al. · IEEE Electron Device Letters · 55

High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

2005 · Daniela Gogova, Henrik Larsson, et al. · Japanese Journal of Applied Physics · 55

Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

2002 · W. Knap, E. Borovitskaya, et al. · Applied Physics Letters · 53

Blue Microlasers Integrated on a Photonic Platform on Silicon

2018 · Farsane Tabataba-Vakili, Laetitia Doyennette, et al. · ACS Photonics · 51

PDF

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

2010 · H.P.D. Schenk, E. Frayssinet, et al. · Journal of Crystal Growth · 51

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

2007 · Z. Bougrioua, M. Laügt, et al. · physica status solidi (a) · 51

Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy

2011 · Eric Frayssinet, Yvon Cordier, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 50

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

2019 · Filippo Giannazzo, Giuseppe Greco, et al. · ACS Applied Electronic Materials · 48

Doping of Homoepitaxial GaN Layers

1998 · P. Prystawko, M. Leszczynski, et al. · physica status solidi (b) · 47

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

2013 · M Khoury, A Courville, et al. · Semiconductor Science and Technology · 46

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

2009 · S. Faure, C. Brimont, et al. · Applied Physics Letters · 44

PDF

Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions

1999 · W. Knap, E. Frayssinet, et al. · Applied Physics Letters · 42

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition