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Ines Pietzonka

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes
2014 · Ilya E. Titkov, Sergey Yu. Karpov, et al. · IEEE Journal of Quantum Electronics · 120
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Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
2014 · M. Auf der Maur, B. Galler, et al. · Applied Physics Letters · 111
Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs
1999 · M. Schubert, J. A. Woollam, et al. · Journal of Applied Physics · 57
Recent results of blue and green InGaN laser diodes for laser projection
2011 · Stephan Lutgen, Dimitri Dini, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 46
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
2016 · Felix Nippert, Sergey Karpov, et al. · Japanese Journal of Applied Physics · 42
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Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures
2015 · Matthias Lohr, Ralph Schregle, et al. · physica status solidi (b) · 40
Tunneling spectroscopy of a quantum dot through a single impurity
2003 · Erik Lind, Boel Gustafson, et al. · Physical review. B, Condensed matter · 37
Infrared dielectric function and phonon modes of highly disordered (AlxGa1−x)0.52In0.48P
2001 · T. Hofmann, G. Leibiger, et al. · Physical review. B, Condensed matter · 33
Oxidation and reduction behavior of Ge/Si islands
2002 · T. Sass, V. Zela, et al. · Applied Physics Letters · 30
Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
2014 · Shafat Jahangir, Ines Pietzonka, et al. · Applied Physics Letters · 25
Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements
2017 · I. Reklaitis, F. Nippert, et al. · Journal of Applied Physics · 24
Near-band-gap CuPt-order-induced birefringence in Al0.48Ga0.52InP2
1999 · Mathias Schubert, Tino Hofmann, et al. · Physical review. B, Condensed matter · 22
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Green laser modules to fit laser projection out of your pocket
2008 · U. Steegmüller, M. Kühnelt, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 21
Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P
2003 · T. Hofmann, M. Schubert, et al. · Applied Physics Letters · 20
Direct-gap reduction and valence-band splitting of ordered indirect-gap AlIn P2 studied by dark-field spectroscopy
1996 · M. Schubert, B. Rheinländer, et al. · Physical review. B, Condensed matter · 20
Unimodal dome-shaped island population of Ge/Si by step-wise growth in UHV-CVD
2002 · V Zela, I Pietzonka, et al. · Physica E Low-dimensional Systems and Nanostructures · 18
Temperature effects on optical properties and efficiency of red AlGaInP-based light emitting diodes under high current pulse pumping
2018 · Amit Yadav, Ilya E. Titkov, et al. · Journal of Applied Physics · 17
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MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates
1997 · V. Gottschalch, R. Franzheld, et al. · Crystal Research and Technology · 15
Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers
2007 · Stefan Illek, Tony Albrecht, et al. · IEEE Photonics Technology Letters · 13
Surface characterization of ordered (GaIn)P
1998 · I. Pietzonka, T. Sass, et al. · Journal of Crystal Growth · 13
Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique
2016 · I. Reklaitis, R. Kudžma, et al. · Journal of Electronic Materials · 12
AlGaInP red-emitting light emitting diode under extremely high pulsed pumping
2016 · Amit Yadav, Ilya E. Titkov, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
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Influence of the domain size on the band gap of ordered (GaIn)P
1999 · Torsten Saß, Ines Pietzonka, et al. · Journal of Applied Physics · 12
Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures
2016 · Anna Nirschl, Michael Binder, et al. · Optics Express · 11
Interdependency of surface morphology and wavelength fluctuations of indium‐rich InGaN/GaN quantum wells
2011 · Teresa Lermer, Ines Pietzonka, et al. · physica status solidi (a) · 11
Works count: 77
Citation count: 933
H-index: 17
I10-index: 26
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