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Ramin Ghodsi

Observed name: R. Ghodsi
OpenAlex ID: A5075530708
7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory
2016 · Tomoharu Tanaka, Mark Helm, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 91
19.1 A 128Gb MLC NAND-Flash device using 16nm planar cell
2014 · Mark Helm, Jae-Kwan Park, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 70
A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s
2010 · G.G. Marotta, A. Macerola, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 53
A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array
2022 · Ted Pekny, Luyen Vu, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 38
A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology
2013 · G. Naso, L. Botticchio, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 31
13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput
2024 · Koichi Kawai, Yuichi Einaga, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 15
Gate-induced drain-leakage in buried-channel PMOS-a limiting factor in development of low-cost, high-performance 3.3-V, 0.25-μm technology
1998 · R. Ghodsi, S. Sharifzadeh, et al. · IEEE Electron Device Letters · 12
Arriving at a unified model for hot-carrier degradation in MOSFET's through gate-to-drain capacitance measurement
1994 · R. Ghodsi, Yew-Tong Yeow, et al. · IEEE Transactions on Electron Devices · 10
Direct observation of secondary ionization current in n-channel MOSFETs
2002 · A. Mihnea, P.J. Rudeck, et al. · IEEE Transactions on Electron Devices · 3
Measurement of MOSFET substrate dopant profile via inversion layer-to-substrate capacitance
1998 · C.Y.-T. Chiang, Che Ta Clement Hsu, et al. · IEEE Transactions on Electron Devices · 2
Evaluation and modelling of hot-carrier induced degradation in MOSFETs by gate-to-drain capacitance measurement
1995 · Ramin Ghodsi · The University of Queensland · 2
Assessment of hot-hole-induced interface states and trapped carriers in submicron n (metal–oxide semiconductor field effect transistors) by gate-to-drain capacitance measurement
1994 · R. Ghodsi, Y. T. Yeow, et al. · Applied Physics Letters · 2
Effects of Source Diffusion on SILC and Cycling-Induced Charge Loss in Source-Bias Erase Flash Cells
2006 · Chun Chen, J. Kessenich, et al. · IEEE International Memory Workshop (IMW) · 1
Hot-carrier induced trapped carriers and interface states in MOSFETs observed by gate-to-drain capacitance measurement
2002 · R. Ghodsi, Y.T. Yeow · IEEE Region 10 Conference (TENCON) · 1
Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot carriers induced degradation
2002 · Y.T. Yeow, R. Ghodsi · IEEE International Conference on Microelectronics (MIEL) · 1
Numerical Simulation of MOSFETs Gate Capacitances for the Evaluation of Hot-Carrier Generated Interface States and Trapped Carriers
1993 · R. Ghodsi, Y. T. Yeow, et al. · Simulation of Semiconductor Devices and Processes · 1
Two dimensional mosfet dopant profile by inverse modelling via source/drain-to-substrate capacitance measurement
2000 · Yen-Ting Chiang, T. Y. T. Yeow, et al.
Small-signal gate-to-drain capacitance of MOSFET as a diagnostic tool for hot-carrier induced degradation
1997 · R. Ghodsi, Y.T. Yeow · Microelectronics Reliability
Evaluation of Localised Trapped Charge and Interface States in MOSFETundefineds Through Gate Capacitances Measurement
1992 · R. Ghodsi, Y. T. Yeow, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 19
Citation count: 333
H-index: 8
I10-index: 8
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