A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s
Year: 2010
Type: conference-paper
Authors: G.G. Marotta, A. Macerola, A. D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, E. Sirizotti, F. Paolini, G. Imondi, G. Naso, G. Santin, L. Botticchio, L. De Santis, L. Pilolli, M.L. Gallese, M. Incarnati, M. Tiburzi, P. Conenna, S. Peru, V. Moschiano, W. Di Francesco, M. Goldman, C. Haid, D. Di Cicco, D. Orlandi, F. Rori, M. Rossini, T. Vali, R. Ghodsi, F. Roohparvar
Institutions: Micron (Italy), Micron (United States), Intel (United States)
Language: English
Subfield: Computer Networks and Communications
Field: Computer Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2017159197