Author

D. Rivers

Observed name: Daniel D. Rivers

Observed institutions: Micron (United States), 3M (United States)

OpenAlex ID: A5041662678

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

2010 · G.G. Marotta, A. Macerola, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 53

Comparative Study of Quick Electron Detrapping and Random Telegraph Signal and Their Dependences on Random Discrete Dopant in Sub-40-nm NAND Flash Memory

2010 · Taehoon Kim, Deping He, et al. · IEEE Electron Device Letters · 11

A Note on Exo-electron Decay Curves

1968 · Daniel D. Rivers · Journal of Applied Physics · 3

Works count: 3

Citation count: 67

H-index: 3

I10-index: 2