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Martin Hetzl

Observed names: Hetzl, Martin, M Hetzl, M. Hetzl
Institution: OSRAM (Germany)
ORCID: 0000-0002-9530-1900
Observed ORCID: 0000-0002-9530-1900
OpenAlex ID: A5076639368
Position-Controlled Growth of GaN Nanowires and Nanotubes on Diamond by Molecular Beam Epitaxy
2015 · Fabian Schuster, Martin Hetzl, et al. · Nano Letters · 86
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Growth and characterization of β-Ga2O3 thin films on different substrates
2019 · S. J. Hao, M. Hetzl, et al. · Journal of Applied Physics · 53
Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures
2016 · Martin Hetzl, Max Kraut, et al. · Nano Letters · 51
Polarity Control of Heteroepitaxial GaN Nanowires on Diamond
2017 · Martin Hetzl, Max Kraut, et al. · Nano Letters · 33
Surface passivation and self-regulated shell growth in selective area-grown GaN–(Al,Ga)N core–shell nanowires
2017 · Martin Hetzl, Julia Winnerl, et al. · Nanoscale · 30
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Doped GaN nanowires on diamond: Structural properties and charge carrier distribution
2015 · Fabian Schuster, Andrea Winnerl, et al. · Journal of Applied Physics · 28
Contact morphology and revisited photocurrent dynamics in monolayer MoS2
2017 · Eric Parzinger, Martin Hetzl, et al. · npj 2D Materials and Applications · 26
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GaN nanowires on diamond
2016 · Martin Hetzl, Fabian Schuster, et al. · Materials Science in Semiconductor Processing · 22
Influence of substrate material, orientation, and surface termination on GaN nanowire growth
2014 · Fabian Schuster, Saskia Weiszer, et al. · Journal of Applied Physics · 22
Homoepitaxial growth of high quality (111)-oriented single crystalline diamond
2016 · C.J. Widmann, M. Hetzl, et al. · Diamond and Related Materials · 21
Role of pixel design and emission wavelength on the light extraction of nitride-based micro-LEDs
2023 · Florian Vögl, Adrian Avramescu, et al. · Optics Express · 20
Sub-bandgap optical spectroscopy of epitaxial β -Ga2O3 thin films
2020 · Sijie Hao, Martin Hetzl, et al. · Applied Physics Letters · 19
GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond
2018 · Martin Hetzl, Jakob Wierzbowski, et al. · Nano Letters · 19
Reprint of: GaN nanowires on diamond
2016 · Martin Hetzl, Fabian Schuster, et al. · Materials Science in Semiconductor Processing · 14
Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions
2015 · Fabian Schuster, Martin Hetzl, et al. · Journal of Applied Physics · 14
Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics
2024 · A. Lex, A. Avramescu, et al. · Journal of Applied Physics · 12
Optical characteristics of thin film-based InGaN micro-LED arrays: a study on size effect and far field behavior
2024 · Florian Vögl, Adrian Avramescu, et al. · Optics Express · 12
Photo-induced selective etching of GaN nanowires in water
2019 · Max Kraut, Florian Pantle, et al. · Nanoscale · 9
A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions
2018 · Martin Hetzl, Max Kraut, et al. · Journal of Applied Physics · 8
Enhanced forward emission by a backside mirror design in micron-sized LEDs
2024 · Florian Vögl, Adrian Avramescu, et al. · Optics Letters · 7
Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity
2014 · Fabian Schuster, Martin Hetzl, et al. · Journal of Applied Physics · 6
Growth mechanisms of F4-TCNQ on inorganic substrates and nanostructures
2018 · H Schamoni, M Hetzl, et al. · Materials Research Express · 3
Strategies for improving light extraction in thin film-based InGaN micro-LED arrays for AR displays
2025 · Florian Vögl, Adrian Avramescu, et al. · Light-Emitting Devices, Materials, and Applications · 1
Growth and electronic properties of coaxial GaN-(Al,Ga,In)N core-shell nanowires
2018 · Theresa Hoffmann, Martin Stutzmann, et al. · Gallium Nitride Materials and Devices · 1
Polarity Control of GaN Nanowires on Diamond: : Experiment and Theory
2018 · Karin Larsson, M. Stutzmann, et al.
Works count: 35
Citation count: 517
H-index: 14
I10-index: 17
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