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Jim Fulford
Observed name:
J. Fulford
Institution:
Tokyo Electron (Japan)
Observed institutions:
Tokyo Electron (Japan),
Micron (United States),
Cypress Semiconductor Corporation (United States),
Advanced Micro Devices (United States),
The University of Texas at Austin
ORCID:
0009-0007-4365-4193
Observed ORCID:
0009-0007-4365-4193
OpenAlex ID:
A5076816641
Effects of chemical composition on the electrical properties of NO-nitrided SiO2
1995
·
M. Bhat
, L. K. Han
, et al.
·
Applied Physics Letters
·
98
Degradation of oxynitride gate dielectric reliability due to boron diffusion
1996
·
D. Wristers
, L. K. Han
, et al.
·
Applied Physics Letters
·
93
Polarity dependence of dielectric breakdown in scaled SiO/sub 2/
2002
·
L.K. Han
, M. Bhat
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
53
Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides
1995
·
M.-Y. Hao
, W.-M. Chen
, et al.
·
Applied Physics Letters
·
34
Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates
2002
·
Y.Y. Chen
, I.M. Liu
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
28
Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs
1997
·
B.Y. Kim
, I.M. Liu
, et al.
·
Microelectronic Engineering
·
23
‘‘Turn-around’’ effects of stress-induced leakage current of ultrathin N2O-annealed oxides
1995
·
Kafai Lai
, Wei-Ming Chen
, et al.
·
Applied Physics Letters
·
15
Ultra thin (>20 Å) CVD Si/sub 3/N/sub 4/ gate dielectric for deep-sub-micron CMOS devices
2002
·
S.C. Song
, H.F. Luan
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
10
Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides
1996
·
Anthony I. Chou
, Kafai Lai
, et al.
·
Applied Physics Letters
·
10
Annealing Effects in Sub-8 μm Pitch Die-to-Wafer Hybrid Bonding
2024
·
Partha Mukhopadhyay
, Laura Wenzel
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
8
High-Performance HfO 2 /Al 2 O 3 Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform
2024
·
Partha Mukhopadhyay
, Ivan Fletcher
, et al.
·
IEEE Transactions on Electron Devices
·
8
Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs
2005
·
B.Y. Kim
, I.M. Liu
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
7
Impact of boron penetration on gate oxide reliability and device lifetime in p/sup +/-poly PMOSFETs
2002
·
B.Y. Kim
, I.M. Liu
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
7
Performance and hot-carrier reliability of N- and P-MOSFETs with rapid thermally NO-nitrided SiO/sub 2/ gate dielectrics
2002
·
M. Bhat
, D. Wristers
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
6
The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-thin oxide and oxynitrides
2002
·
A.I. Chou
, C. Lin
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
One Time Programming Device Yield Study Based On Anti-Fuse Gate Oxide Breakdown on P-type and N-type Substrates
2006
·
N. Mathur
, Y. Ahn
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
5
Enhanced hot-hole degradation in P/sup +/-poly PMOSFETs with oxynitride gate dielectrics
2003
·
Y.Y. Chen
, M. Gardner
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
4
Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO
1999
·
S. C. Song
, C. H. Lee
, et al.
·
MRS Proceedings
·
4
Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation
1996
·
D. Wristers
, H.H. Wang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
4
Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform
2024
·
Partha Mukhopadhyay
, Ivan Fletcher
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
3
Hydrogen denudation for enhanced thin oxide quality, device performance, and potential epitaxial elimination
2002
·
M. Gardner
, D. Wristers
, et al.
·
Symposium on VLSI Technology
·
3
The effect of hydrogen denudation on thin oxides, device performance, and epitaxial elimination
2002
·
J. Fulford
, D. Wristers
, et al.
·
Biennial University/Government/Industry Microelectronics Symposium
·
2
Characteristics of Wide-Bandgap AlN/Al2O3 Bilayer Passivation on Different Substrates by Batch ALD on 200 Mm Platform
2025
·
Partha Mukhopadhyay
, Zuriel Caribe
, et al.
·
ECS Meeting Abstracts
·
1
High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process
1999
·
S. C. Song
, H. F. Luan
, et al.
·
MRS Proceedings
·
1
Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection
1999
·
Y. Y. Chen
, M. Gardner
, et al.
·
MRS Proceedings
·
1
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Works count:
37
Citation count:
434
H-index:
9
I10-index:
9
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