Work

High-Performance HfO 2 /Al 2 O 3 Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3353702

Authors: Partha Mukhopadhyay, Ivan Fletcher, Zuriel C. Couvertier, Julio Morris, Jennifer Perez, Chris Nichols, John Allgair, Jim Vandevere, Winston V. Schoenfeld, Sara Aoki, Enzo Novoselic, Shara Lombardo, Dina Triyoso, Jon Kretzschmar, Anton deVilliers, Jim Fulford

Institutions: University of Central Florida, Tokyo Electron (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Tokyo Electron

OpenAlex ID: W4391249385

FWCI: 0.761

Cites: 30

Cited by: 8

Related to: 10