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Sunae Seo

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011 · Myoung-Jae Lee, Chang Bum Lee, et al. · Nature Materials · 2,226
Reproducible resistance switching in polycrystalline NiO films
2004 · S. Seo, M. J. Lee, et al. · Applied Physics Letters · 932
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
2006 · D. C. Kim, S. Seo, et al. · Applied Physics Letters · 525
Random Circuit Breaker Network Model for Unipolar Resistance Switching
2008 · Seung Chul Chae, Jae Sung Lee, et al. · Advanced Materials · 349
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
2007 · Gyeong-Su Park, Xiang-Shu Li, et al. · Applied Physics Letters · 239
A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
2006 · M.‐J. Lee, S. Seo, et al. · Advanced Materials · 234
Improvement of resistive memory switching in NiO using IrO2
2006 · D. C. Kim, M. J. Lee, et al. · Applied Physics Letters · 190
Conductivity switching characteristics and reset currents in NiO films
2005 · S. Seo, M. J. Lee, et al. · Applied Physics Letters · 160
Interaction and ordering of vacancy defects in NiO
2008 · Sohee Park, Hyo-Shin Ahn, et al. · Physical Review B · 157
Robust bi-stable memory operation in single-layer graphene ferroelectric memory
2011 · Emil B. Song, Bob Lian, et al. · Applied Physics Letters · 155
Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics
2011 · Young Gon Lee, Chang Goo Kang, et al. · Applied Physics Letters · 148
Palladium-Decorated Hydrogen-Gas Sensors Using Periodically Aligned Graphene Nanoribbons
2014 · Yusin Pak, Sang-Mook Kim, et al. · ACS Applied Materials & Interfaces · 140
Transparent and Flexible Graphene Charge-Trap Memory
2012 · Sung Min Kim, Emil B. Song, et al. · ACS Nano · 115
Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes
2009 · J. S. Choi, J.-S. Kim, et al. · Applied Physics Letters · 115
Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application
2005 · Hyunjun Sim, Dooho Choi, et al. · IEEE Electron Device Letters · 108
The structural and electrical evolution of graphene by oxygen plasma-induced disorder
2009 · Dong Chul Kim, Dae-Young Jeon, et al. · Nanotechnology · 105
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Breakdown of the Interlayer Coherence in Twisted Bilayer Graphene
2013 · Youngwook Kim, Hoyeol Yun, et al. · Physical Review Letters · 99
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Random and localized resistive switching observation in Pt/NiO/Pt
2007 · Jung‐Bin Yun, Sejin Kim, et al. · physica status solidi (RRL) - Rapid Research Letters · 88
Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition
2011 · J. Heo, H. J. Chung, et al. · Physical Review B · 81
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Band Gap Opening by Two-Dimensional Manifestation of Peierls Instability in Graphene
2011 · Sung-Hoon Lee, Hyun-Jong Chung, et al. · ACS Nano · 81
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Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures
2008 · Chanwoo Park, Sang Ho Jeon, et al. · Applied Physics Letters · 80
Robust graphene wet transfer process through low molecular weight polymethylmethacrylate
2015 · Seonyeong Kim, Somyeong Shin, et al. · Carbon · 76
Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current
2011 · Sung Min Kim, Emil B. Song, et al. · Applied Physics Letters · 69
Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition
2011 · Insu Jeon, Heejun Yang, et al. · ACS Nano · 67
Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control
2007 · Ranju Jung, Myoung-Jae Lee, et al. · Applied Physics Letters · 61
Works count: 113
Citation count: 7,899
H-index: 36
I10-index: 73
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