Author

R. Menezla

Observed name: R Menezla

Observed institution: Université Djilali de Sidi Bel Abbès

OpenAlex ID: A5078437968

Simulation of the high frequency C–V characteristics of lateral PN junctions on polysilicon films

1997 · M Amrani, R Menezla, et al. · Materials Science and Engineering B · 9

Study of lateral polysilicon PN diodes C–V characteristics: Modeling and experiments

1998 · M Amrani, H Sehil, et al. · Solid-State Electronics · 5

Two-dimensional simulation of the effects of grain boundaries on theC–Vcharacteristics of P+N polysilicon diodes

2005 · M Amrani, Z Benamara, et al. · Journal of Physics D Applied Physics · 4

Characterization of the polysilicon thin film transistors elaborated in high and low temperature processes. Study of the density of traps

1997 · H. Sehil, N.M. Rahmani, et al. · Synthetic Metals · 3

Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode

2005 · M. Amrani, N. Benseddik, et al. · Materials Science and Engineering B · 2

3-D SIMULATION AND MODELLING OF THE DEEP CENTRES EFFECT ON THE TRANSPORT PHENOMENA INSIDE A GaAs SEMI INSULATING P+VN+ STRUCTURE

2009 · Badra Bouabdallah, Boucif Benichou, et al. · The African review of physics

Works count: 6

Citation count: 23

H-index: 3

I10-index: