Author

Irina Makarowa

Observed name: I. Makarowa

Observed institutions: Institute of High Pressure Physics, TopGaN (Poland), Polish Academy of Sciences

OpenAlex ID: A5078520875

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

2020 · K. Pieniak, M. Chlipala, et al. · Optics Express · 42

Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

2005 · G. Franssen, T. Suski, et al. · Applied Physics Letters · 42

Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

2007 · M. Kryśko, G. Franssen, et al. · Applied Physics Letters · 41

High-Optical-Power InGaN Superluminescent Diodes with “j-shape” Waveguide

2013 · Anna Kafar, Szymon Stanczyk, et al. · Applied Physics Express · 40

Design and optimization of InGaN superluminescent diodes

2015 · Anna Kafar, Szymon Stańczyk, et al. · physica status solidi (a) · 25

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

2017 · Anna Kafar, Szymon Stanczyk, et al. · Photonics Research · 17

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

2015 · G. Muziol, M. Siekacz, et al. · Journal of Crystal Growth · 13

Emission wavelength dependence of characteristic temperature of InGaN laser diodes

2013 · Agata Bojarska, Jakub Goss, et al. · Applied Physics Letters · 13

Influence of the growth method on degradation of InGaN laser diodes

2017 · Agata Bojarska, Grzegorz Muzioł, et al. · Applied Physics Express · 11

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

2018 · Agata Bojarska, Jakub Goss, et al. · Superlattices and Microstructures · 10

Low dislocation density, high power InGaN laser diodes

2004 · Piotr Perlin, M. Leszczyñski, et al. · MRS Internet Journal of Nitride Semiconductor Research · 10

Negative-T InGaN laser diodes and their degradation

2015 · Agata Bojarska, Łucja Marona, et al. · Applied Physics Letters · 9

Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

2016 · Piotr Perlin, Szymon Stańczyk, et al. · MRS Advances · 8

InGaN Laser Diode Degradation. Surface and Bulk Processes

2009 · Piotr Perlin, Łucja Marona, et al. · MRS Proceedings · 6

Carrier recombination mechanisms in nitride single quantum well light-emitting diodes revealed by photo- and electroluminescence

2008 · S. Grzanka, G. Franssen, et al. · Journal of Applied Physics · 4

Thermal properties of InGaN laser diodes and arrays

2013 · Szymon Stańczyk, Anna Kafar, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3

Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure

2006 · G. Franssen, T. Suski, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note

2018 · Anna Kafar, Szymon Stanczyk, et al. · Photonics Research · 2

Thermal properties of InGaN Laser Diodes and Arrays

2013 · Stanczyk Szymon, Anna Kafar, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Works count: 19

Citation count: 299

H-index: 10

I10-index: 11