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C. Blaauw

Observed names: BLAAUW, CORNELIS, Blaauw, C., C Blaauw, C. BLAAUW, Cornelis Blaauw, Cornelis Blaauw Cornelis Blaauw
Observed institutions: Dalhousie University, Nortel (Canada), University of Groningen, Bell (Canada), Canmet Mining, McGill University, University of Glasgow
OpenAlex ID: A5079625865
Magnetic and structural properties of BiFeO3
1973 · C Blaauw, F van der Woude · Journal of Physics C Solid State Physics · 176
The metal-non-metal transition in VO2: X-ray photoemission and resistivity measurements
1975 · C Blaauw, F Leenhouts, et al. · Journal of Physics C Solid State Physics · 114
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Secondary ion mass spectrometry and electrical characterization of Zn diffusion in n-type InP
1989 · C. Blaauw, F. R. Shepherd, et al. · Journal of Applied Physics · 62
Optically pumped surface-emitting DFB GaInAsP/InP lasers with circular grating
1991 · C. Wu, M. Svilans, et al. · Electronics Letters · 58
Preparation and Characterization of Plasma‐Deposited Silicon Nitride
1984 · C. Blaauw · Journal of The Electrochemical Society · 55
Stress in chemical-vapor-deposited SiO2 and plasma-SiNx films on GaAs and Si
1983 · C. Blaauw · Journal of Applied Physics · 52
MOCVD of InP and mass transport on structured InP substrates
1986 · C. Blaauw, A. Szaplonczay, et al. · Journal of Crystal Growth · 50
Mossbauer study and band structure of FeSi2
1973 · C Blaauw, F van der Woude, et al. · Journal of Physics C Solid State Physics · 47
Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers
1996 · H. Lu, C. Blaauw, et al. · Journal of Lightwave Technology · 34
Vo2における金属‐非金属転移: X線光電子放出および抵抗の測定
1975 · C Blaauw, F Leenhouts, et al. · 33
Analysis of a time-dependent supply mechanism in selective area growth by MOCVD
2002 · J.E. Greenspan, C. Blaauw, et al. · Journal of Crystal Growth · 31
Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation
1997 · M. Paquette, J. Beauvais, et al. · Applied Physics Letters · 30
Room temperature operation of electrically pumped surface-emitting circular grating DBR laser
1992 · C. Wu, M. Svilans, et al. · Electronics Letters · 30
Pd/Zn/Pd/Au ohmic contacts to ρ-Type InP
1991 · D. G. Ivey, P. Jian, et al. · Journal of Electronic Materials · 29
Metalorganic chemical-vapour-deposition growth and characterization of GaAs
1985 · C. Blaauw, C. Miner, et al. · Canadian Journal of Physics · 29
Moessbauer characteristics of UICC standard reference asbestos samples
1980 · G. Stroink, C. Blaauw, et al. · The Canadian Mineralogist · 27
Cadmium doping of InP grown by MOCVD
1987 · C. Blaauw, B. Emmerstorfer, et al. · Journal of Crystal Growth · 26
Mössbauer Analysis of Talc and Chlorite
1980 · C. Blaauw, G. Stroink, et al. · Le Journal de Physique Colloques · 26
High-power and high-speed performance of 1.3-μm strained MQW gain-coupled DFB lasers
1995 · Hanh Lu, C. Blaauw, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 24
Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
1987 · P.A. Houston, C. Blaauw, et al. · Electronics Letters · 24
Confirmation of selective site occupation of dilute Co impurities in Fe3Si using the Mössbauer effect technique
1976 · C. Blaauw, G.R. MacKay, et al. · Solid State Communications · 24
85/spl deg/C investigation of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers
2001 · J.K. White, C. Blaauw, et al. · IEEE Photonics Technology Letters · 23
High-speed bulk InGaAsP-InP electroabsorption modulators with bandwidth in excess of 20 GHz
1990 · G. Mak, C. Rolland, et al. · IEEE Photonics Technology Letters · 23
Strongly gain-coupled (SGC) coolerless (-40°C∼+85°C) MQW DFB lasers
1999 · J. Hong, C. Blaauw, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 20
Crystal‐field properties of Fe in brucite Mg(OH)2
1979 · C. Blaauw, G. Stroink, et al. · physica status solidi (b) · 20
Works count: 95
Citation count: 1,501
H-index: 23
I10-index: 45
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