Author

Thomas Huault

Observed names: Huault, T, T. Huault

Observed institutions: Centre National de la Recherche Scientifique, Université Joseph Fourier, Centre National pour la Recherche Scientifique et Technique (CNRST), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

ORCID: 0000-0002-5159-6700

Observed ORCID: 0000-0002-5159-6700

OpenAlex ID: A5080883353

Blue-green and white color tuning of monolithic light emitting diodes

2010 · B. Damilano, P. Demolon, et al. · Journal of Applied Physics · 51

Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots

2008 · T. Huault, J. Brault, et al. · Applied Physics Letters · 45

Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

2009 · M. Korytov, M. Benaissa, et al. · Applied Physics Letters · 36

Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range

2009 · J. Brault, T. Huault, et al. · Journal of Applied Physics · 36

Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

2008 · B. Damilano, A. Dussaigne, et al. · Applied Physics Letters · 32

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h

2013 · Brian M. McSkimming, F. Wu, et al. · Journal of Crystal Growth · 30

Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy

2014 · Hironori Okumura, Brian M. McSkimming, et al. · Applied Physics Letters · 25

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

2008 · Benjamin Damilano, Franck Natali, et al. · Applied Physics Express · 21

Cell‐permeant cytoplasmic blue fluorophores optimized for in vivo two‐photon microscopy with low‐power excitation

2007 · Ali Hayek, Alexei Grichine, et al. · Microscopy Research and Technique · 19

Phase separation in GaN/AlGaN quantum dots

2009 · M. Benaissa, L. Gu, et al. · Applied Physics Letters · 18

Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots

2010 · Je-Hyung Kim, Bong-Joon Kwon, et al. · Applied Physics Letters · 13

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

2011 · S. Sergent, B. Damilano, et al. · Journal of Applied Physics · 12

Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

2012 · M. Korytov, J. A. Budagosky, et al. · Journal of Applied Physics · 6

GaN/Al0.5Ga0.5N quantum dots and quantum dashes

2009 · Thomas Huault, Julien Brault, et al. · physica status solidi (b) · 4

Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

2010 · Benjamin Damilano, Thomas Huault, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 1

Optical properties and carrier dynamics in multiple-stacked GaN quantum dots and GaN quantum dashes grown by molecular beam epitaxy

2010 · Je‐Hyung Kim, Bong‐Joon Kwon, et al.

Structural and morphological characterization of GaN/AlGaN quantum dots by transmission electron microscopy

2008 · M. Korytov, M. Benaissa, et al. · Springer eBooks

Works count: 18

Citation count: 349

H-index: 12

I10-index: 12