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Takaaki Miyasako
Observed names:
Miyasako, Takaaki,
T. Miyasako,
Taka-aki Miyasako
Institution:
Murata (Japan)
Observed institutions:
Tokyo Institute of Technology,
Okayama University,
Japan Advanced Institute of Science and Technology,
Japan Science and Technology Agency,
JSR (Japan),
Murata (Japan)
show all 6
ORCID:
0000-0003-1057-2072
Observed ORCID:
0000-0003-1057-2072
OpenAlex ID:
A5080942257
Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability
2005
·
Takaaki Miyasako
, Masaru Senoo
, et al.
·
Applied Physics Letters
·
130
Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors
2013
·
Kenichi Umeda
, Takaaki Miyasako
, et al.
·
Journal of Applied Physics
·
84
PDF
High-Performance Solution-Processed ZrInZnO Thin-Film Transistors
2012
·
Phan Trong Tue
, Takaaki Miyasako
, et al.
·
IEEE Transactions on Electron Devices
·
66
Use of ferroelectric gate insulator for thin film transistors with ITO channel
2005
·
E. Tokumitsu
, M. Senoo
, et al.
·
Microelectronic Engineering
·
50
Rheology printing for metal-oxide patterns and devices
2013
·
Toshihiko Kaneda
, Daisuke Hirose
, et al.
·
Journal of Materials Chemistry C
·
46
PDF
Totally solution-processed ferroelectric-gate thin-film transistor
2010
·
Takaaki Miyasako
, Bui Nguyen Quoc Trinh
, et al.
·
Applied Physics Letters
·
37
PDF
A low-temperature crystallization path for device-quality ferroelectric films
2010
·
Jinwang Li
, Hiroyuki Kameda
, et al.
·
Applied Physics Letters
·
35
PDF
Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
2011
·
Takaaki Miyasako
, Bui Nguyen Quoc Trinh
, et al.
·
Japanese Journal of Applied Physics
·
30
PDF
Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation
2015
·
Chaiyanan Kulchaisit
, Yasuaki Ishikawa
, et al.
·
Journal of Display Technology
·
19
Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process
2020
·
Mohit
, Takaaki Miyasako
, et al.
·
Japanese Journal of Applied Physics
·
18
PDF
Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors
2013
·
Huynh Thi Cam Tu
, Satoshi Inoue
, et al.
·
IEEE Transactions on Electron Devices
·
17
Low-Temperature All-Solution-Derived Amorphous Oxide Thin-Film Transistors
2013
·
Phan Trong Tue
, Jinwang Li
, et al.
·
IEEE Electron Device Letters
·
13
PDF
Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors
2010
·
Phan Trong Tue
, Takaaki Miyasako
, et al.
·
Ferroelectrics
·
13
Variable-area capacitors controlled by HfO2-based ferroelectric-gate field-effect transistors
2022
·
Takaaki Miyasako
, Shingo Yoneda
, et al.
·
Applied Physics Letters
·
12
High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte
2020
·
Jinwang Li
, Hirokazu Tsukada
, et al.
·
Journal of Applied Physics
·
8
Crystallization of lead zirconate titanate without passing through pyrochlore by new solution process
2012
·
Hiroyuki Kameda
, Jinwang Li
, et al.
·
Journal of the European Ceramic Society
·
8
All solution-processed amorphous oxide thin-film transistors using UV/O3 treatment
2014
·
Kenichi Umeda
, Takaaki Miyasako
, et al.
·
Japanese Journal of Applied Physics
·
7
PDF
Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure
2013
·
Pham Van Thanh
, Bui Nguyen Quoc Trinh
, et al.
·
Ferroelectrics Letters Section
·
7
Surface-modified lead–zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors
2013
·
Tue Trong Phan
, Takaaki Miyasako
, et al.
·
Applied Physics A
·
6
Fabrication and characterization of a ferroelectric-gate FET With a ITO/PZT/SRO/Pt stacked structure
2010
·
Phan Trong Tue
, Bui Nguyen Quoc Trinh
, et al.
·
6
Impact of ambient moisture on gate controllability in ferroelectric-gate field-effect transistors with bottom-gate geometry
2024
·
Sang-Gyu Koh
, Takaaki Miyasako
, et al.
·
Japanese Journal of Applied Physics
·
5
PDF
Ferroelectric-gated variable-area capacitors with large capacitance tuning ratio using Ce-doped HfO2 film for both gate insulator and capacitor layer
2023
·
Takaaki Miyasako
, Shingo Yoneda
, et al.
·
Japanese Journal of Applied Physics
·
5
PDF
Investigation of solution-processed bismuth-niobium-oxide films
2014
·
Satoshi Inoue
, Tomoki Ariga
, et al.
·
Journal of Applied Physics
·
5
PDF
Observation of high dielectric constant of Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process
2014
·
Masatoshi Onoue
, Takaaki Miyasako
, et al.
·
IEICE Electronics Express
·
4
PDF
Impact of low pressure consolidation annealing on electrical properties of sol–gel derived Pb(Zr,Ti)O3 films
2005
·
Eisuke Tokumitsu
, Taka-aki Miyasako
, et al.
·
Journal of the European Ceramic Society
·
4
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Works count:
73
Citation count:
653
H-index:
13
I10-index:
14
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