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Author

Geert D. J. Smit

Observed names: D. J. Geert Smit, G. D. J. Smit, G. D. J. Smit E, G.D.J Smit, G.D.J. Smit, Geert D J Smit, Geert D. J. Smit B, Geert D.J. Smit, Gert-Jan Smit, Gert-jan Smit, Smit G.D.J., Smit, G., Smit, G. D. J., Smit, G.D.J. (author)
Institution: NXP (Netherlands)
Observed institutions: NXP (Netherlands), Utrecht University, Philips (Netherlands), NXP (Germany), Signify (Netherlands), Delft University of Technology
ORCID: 0000-0003-1794-5724
Observed ORCID: 0000-0003-1794-5724
OpenAlex ID: A5082347484
PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation
2006 · G. Gildenblat, X. Li, et al. · IEEE Transactions on Electron Devices · 413
Scaling of nano-Schottky-diodes
2002 · G. D. J. Smit, S. Rogge, et al. · Applied Physics Letters · 261
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Enhanced tunneling across nanometer-scale metal–semiconductor interfaces
2002 · G. D. J. Smit, S. Rogge, et al. · Applied Physics Letters · 121
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Best Practices for Compact Modeling in Verilog-A
2015 · Colin C. McAndrew, Geoffrey J. Coram, et al. · IEEE Journal of the Electron Devices Society · 103
Experimental assessment of self-heating in SOI FinFETs
2009 · A.J. Scholten, G.D.J. Smit, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 100
RF-Noise Modeling in Advanced CMOS Technologies
2013 · Geert D. J. Smit, Andries J. Scholten, et al. · IEEE Transactions on Electron Devices · 54
The Physical Background of JUNCAP2
2006 · A.J. Scholten, G.D.J. Smit, et al. · IEEE Transactions on Electron Devices · 46
Stark effect in shallow impurities in Si
2004 · G. D. J. Smit, S. Rogge, et al. · Physical Review B · 43
Introduction to PSP MOSFET Model
2005 · G. Gildenblat, Klaassen D.B.M., et al. · TechConnect Briefs · 41
Benchmark Tests for MOSFET Compact Models With Application to the PSP Model
2009 · Xin Li, Weimin Wu, et al. · IEEE Transactions on Electron Devices · 39
The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications
2009 · Andries J. Scholten, Geert D. J. Smit, et al. · IEEE Journal of Solid-State Circuits · 38
The Relation Between Degradation Under DC and RF Stress Conditions
2011 · Andries J. Scholten, Daniel Stephens, et al. · IEEE Transactions on Electron Devices · 37
A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations
2006 · H. Wang, X. Li, et al. · IEEE Transactions on Electron Devices · 36
PSP-based compact FinFET model describing dc and RF measurements
2006 · G.D.J. Smit, A.J. Scholten, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
Gate-induced ionization of single dopant atoms
2003 · G. D. J. Smit, S. Rogge, et al. · Physical review. B, Condensed matter · 32
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Symmetric linearization method for double-gate and surrounding-gate MOSFET models
2009 · Gajanan Dessai, Aritra Dey, et al. · Solid-State Electronics · 31
Surface-Potential-Based Compact Model of Bulk MOSFET
2010 · Gennady Gildenblat, Weimin Wu, et al. · Springer eBooks · 25
Scaling of micro-fabricated nanometer-sized Schottky diodes
2002 · G.D.J. Smit, M.G. Flokstra, et al. · Microelectronic Engineering · 24
PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs
2007 · W. Wu, X. Li, et al. · IEEE Custom Integrated Circuits Conference (CICC) · 23
PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
2008 · W. Wu, X. Li, et al. · Solid-State Electronics · 21
Benchmarking the PSP Compact Model for MOS Transistors
2007 · Xin Li, Weimin Wu, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 20
Experimental Demonstration and Modeling of Excess RF Noise in Sub-100-nm CMOS Technologies
2010 · Geert D J Smit, Andries J Scholten, et al. · IEEE Electron Device Letters · 19
Surface-potential-based MOSFET models with introduction to PSP (invited)
2009 · G. Gildenblat, W. Wu, et al. · IEEE Wireless and Microwave Technology Conference (WAMICON) · 17
Unified non-quasi-static MOSFET model for large-signal and small-signal simulations
2006 · H. Wang, X. Li, et al. · IEEE Custom Integrated Circuits Conference (CICC) · 16
PSPHV: A Surface-Potential-Based Model for LDMOS Transistors
2019 · Kejun Xia, Colin C. McAndrew, et al. · IEEE Transactions on Electron Devices · 15
Works count: 66
Citation count: 1,763
H-index: 20
I10-index: 31
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