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H.C. Rieffe

Observed names: H. C. Rieffe, H. Ch. Rieffe, H. Rieffe, Henk Rieffe, Rieffe, H., Rieffe, H. C.
OpenAlex ID: A5082437551
Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD
2005 · Wim Soppe, Henk Rieffe, et al. · Progress in Photovoltaics Research and Applications · 142
Spectral response and IV-characterization of dye-sensitized nanocrystalline TiO 2 solar cells
2000 · P.M. Sommeling, H.C. Rieffe, et al. · Solar Energy Materials and Solar Cells · 72
Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells
2005 · C.H.M. van der Werf, H.D. Goldbach, et al. · Thin Solid Films · 27
Bulk passivation of multicrystalline silicon solar cells induced by high‐rate‐deposited (> 1 nm/s) silicon nitride films
2002 · J. Hong, W. M. M. Kessels, et al. · Progress in Photovoltaics Research and Applications · 24
The fundamental properties of SiN/sub x/:H that determine its passivating qualities
2005 · A.W. Weeber, H.C. Rieffe, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 17
On combining surface and bulk passivation of SiN/sub x/:H layers for mc-Si solar cells
2003 · W.J. Soppe, J. Hong, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 10
A program for the conversion of fine group flux density and cross section data to coarse group values
1981 · H.C. Rieffe · 3
Straighforward in-line processing for a 16.8% efficient mc-Si solar cell
2005 · C.J.J. Tool, G. Coletti, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 2
Initial Stage Hydrogen Movement and IR Absorption Proportionality Constants In Hot-Wire Deposited SiN1.2:H During High-Temperature Annealing
2005 · H.D. Goldbach, V. Verlaan, et al. · MRS Proceedings · 2
Improved thermally stable surface and bulk passivation of PECVD SiN X:H using N2 and SiH4
2003 · Weeber, A.W., Rieffe, H. C., et al. · TU/e Research Portal · 2
Structural film characteristics related to the passivation properties of high-rate (>0.5 nm/s) plasma deposited a-SiN/sub x/:H
2003 · Joonhwa Hong, W. M. M. Kessels, et al. · TU/e Research Portal · 2
Passivation on mc-si solar cells with PECVD SiNx:H using N2 and SiH4
2002 · H.C. Rieffe, W.J. Soppe, et al. · TU/e Research Portal · 2
Hot-wire chemical vapor deposition of silicon nitride for multicrystalline silicon solar cells
2005 · H.D. Goldbach, C.H.M. van der Werf, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 1
Comparison of DETAN-74 and ENDF/B-IV cross section data in 620 groups
1978 · W.L. Zijp, H. J. Nolthenius, et al. · 1
High-rate (< 1 nm/s) plasma deposited a-SiN/sub x/:H films for mc-Si solar cell application
2003 · J. Hong, W.M.M. Kessels, et al. · Conference record of the IEEE Photovoltaic Specialists Conference
Improved thermally stable surface and bulk passivation of PECVD SiN/sub x/:H using N/sub 2/ and SiH/sub 4/
2003 · A.W. Weeber, H.C. Rieffe, et al. · TU/e Research Portal
Comparison of Measured and Evaluated Spectrum-Averaged Cross-Section Data for Reactor Neutron Metrology
1983 · W. L. Zijp, H. Ch. Rieffe, et al. · Springer eBooks
Works count: 19
Citation count: 307
H-index: 6
I10-index: 6
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