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A.J. Winser

Observed names: A J Winser, A Winser, A. J. Winser, A.J Winser
Observed institution: University of Nottingham
OpenAlex ID: A5082630509
Strong blue emission from As doped GaN grown by molecular beam epitaxy
2000 · A. J. Winser, S. V. Novikov, et al. · Applied Physics Letters · 38
Arsenic-doped GaN grown by molecular beam epitaxy
2000 · C.T Foxon, S.V Novikov, et al. · Journal of Crystal Growth · 28
The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
2002 · C T Foxon, I Harrison, et al. · Journal of Physics Condensed Matter · 27
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A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride
2001 · S V Novikov, A J Winser, et al. · Semiconductor Science and Technology · 22
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The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy
2002 · S.V. Novikov, A.J. Winser, et al. · Journal of Crystal Growth · 16
Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System
2001 · S.V. Novikov, T. Li, et al. · physica status solidi (b) · 14
Bismuth a new dopant for GaN films grown by molecular beam epitaxy—surfactant effects, formation of GaN1−xBix alloys and co-doping with arsenic
2002 · S.V Novikov, A.J Winser, et al. · Journal of Crystal Growth · 13
Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy
2002 · C.T. Foxon, S.V. Novikov, et al. · physica status solidi (a) · 10
The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules
2002 · C.T. Foxon, I. Harrison, et al. · Journal of Crystal Growth · 10
Carrier relaxation dynamics for As defects in GaN
2001 · Bernard Gil, Aurélien Morel, et al. · Applied Physics Letters · 10
Arsenic incorporation in GaN during growth by molecular beam epitaxy
2003 · C.T. Foxon, S.V. Novikov, et al. · Journal of Crystal Growth · 7
X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy
2002 · T Li, C.R Staddon, et al. · Journal of Crystal Growth · 6
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
2000 · H.Z. Xu, Z.G. Wang, et al. · Journal of Crystal Growth · 6
Strong blue emission from GaN isoelectronically doped with arsenic
2002 · C.T Foxon, S.V Novikov, et al. · Materials Science and Engineering B · 5
On the Origin of Blue Emission from As-Doped GaN
2001 · I. Harrison, S.V. Novikov, et al. · physica status solidi (b) · 4
The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy
2001 · C.T. Foxon, S.V. Novikov, et al. · physica status solidi (b) · 4
Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates
2003 · S.V. Novikov, L.X. Zhao, et al. · Journal of Crystal Growth · 3
The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy
2001 · C.T. Foxon, S.V. Novikov, et al. · physica status solidi (b) · 3
Blue emission from arsenic doped gallium nitride
2001 · A.J. Winser, I. Harrison, et al. · Journal of Crystal Growth · 3
Growth of GaNAs films by molecular beam epitaxy
2001 · C.T Foxon, S.V Novikov, et al. · Journal of Crystal Growth · 3
Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy
2002 · C.T. Foxon, S.V. Novikov, et al. · physica status solidi (a) · 2
The Influence of Arsenic Incorporation on the Optical Properties of As-doped GaN Films Grown by Molecular Beam Epitaxy Using Arsenic Tetramers
2001 · S.V. Novikov, T. Li, et al. · physica status solidi (b) · 2
A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy
2001 · S. Marlafeka, N. Bock, et al. · Journal of Crystal Growth · 1
Arsenic incorporation in GaN during growth by molecular beam epitaxy
2003 · C.T. Foxon, S.V. Novikov, et al. · International Conference on Molecular Bean Epitaxy
Works count: 24
Citation count: 237
H-index: 10
I10-index: 10
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