Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
M. Zoaeter
Observed names:
M Zoaeter,
M. ZOAETER,
M. Zoater,
Mohamed Zoaeter
Institution:
Lebanese University
Observed institutions:
Lebanese University,
Saint Joseph University,
National Council for Scientific Research,
Institut de Physique de Nice,
Université de Nantes,
Nantes Université
show all 6
OpenAlex ID:
A5082728201
Structural properties of boron compounds at high pressure
2004
·
F El Haj Hassan
, H Akbarzadeh
, et al.
·
Journal of Physics Condensed Matter
·
76
PDF
Computational study of AgCl and AgBr semiconductors
2007
·
T. Benmessabih
, B. Amrani
, et al.
·
Physica B Condensed Matter
·
54
Analytical and numerical modeling of mechanical properties of orthogonal 3D CFRP
2007
·
Ch. El Hage
, R. Younès
, et al.
·
Composites Science and Technology
·
47
Dependence of the Total Mobility in a One‐Band Model Applicationto n‐Type MoTe2
1984
·
A. Conan
, A. Bonnet
, et al.
·
physica status solidi (b)
·
25
Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses
2007
·
M. Alwan
, B. Beydoun
, et al.
·
Microelectronics Reliability
·
22
Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET
2007
·
M. Alwan
, B. Beydoun
, et al.
·
Microelectronics Journal
·
21
FIRST-PRINCIPLES INVESTIGATION OF SnO 2AT HIGH PRESSURE
2005
·
F. EL HAJ HASSAN
, A. ALAEDDINE
, et al.
·
International Journal of Modern Physics B
·
19
Brownian dynamics simulations for rod-like particles in dilute flowing solution
2002
·
A. Hijazi
, M. Zoaeter
·
European Polymer Journal
·
19
Transport properties of MoTe2−x and MoSe2−x compounds between 130 and 300°K
1975
·
Alain Conan
, Guy Goureaux
, et al.
·
Journal of Physics and Chemistry of Solids
·
18
First-principles study of rock-salt AgClxBr1−x alloys
2007
·
B. Amrani
, F. El Haj Hassan
, et al.
·
Physica B Condensed Matter
·
17
Static and low frequency noise characterization of surface- and buried-mode 0.1 μm P and N MOSFETs
2002
·
M Fadlallah
, G Ghibaudo
, et al.
·
Microelectronics Reliability
·
17
Influence of the stoichiometry deviation on the electrical properties of MoTe2-x
1988
·
A. Bonnet
, A. Conan
, et al.
·
Journal de physique
·
17
Structural and electronic properties of Zn1−xMgxSySe1−y alloys
2006
·
F. El Haj Hassan
, A. Bleybel
, et al.
·
Materials Letters
·
14
Tellurium depletion electrical effects in MoTe2-x single crystals doped with bromine
1997
·
M Morsli
, A Bonnet
, et al.
·
Journal of Materials Science
·
14
Nouvelle méthode de mesure rapide du pouvoir thermoélectrique aux très basses températures de petits échantillons. Application au cobalt monocristallin
1971
·
A. Conan
, G. Goureaux
, et al.
·
Revue de Physique Appliquée
·
14
Transport measurements and band structure of bulk MoSe2-x compounds
1977
·
M. Zoaeter
, A. Conan
, et al.
·
physica status solidi (a)
·
12
Efficient classification algorithm and a new training mode for the adaptive radial basis function neural network equaliser
2012
·
R. Assaf
, S. El Assad
, et al.
·
IET Communications
·
9
Experimental study of the collision between a rod like macromolecule and a solid surface
2003
·
A. Hijazi
, L. Ben Yahia
, et al.
·
European Polymer Journal
·
9
Two-dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics
2005
·
M. Alwan
, B. Beydoun
, et al.
·
Materials Science and Engineering B
·
8
Détermination de la structure de bande de MoTe2-x à partir de l'étude de phénomènes de transport
1976
·
A. Conan
, M. Zoaeter
, et al.
·
Journal de physique
·
8
Une modélisation de haut niveau des stratégies d'écriture motrice d'enfants en scolarité primaire : approche bayésienne
2005
·
I. Zaarour
, B. El-Eter
, et al.
·
Journal de Physique IV (Proceedings)
·
5
Appareil de mesure d'effet Hall en alternatif. Application MoTe 2 monocristallin
1982
·
D. Ramoul
, A. Conan
, et al.
·
Revue de Physique Appliquée
·
5
Structural and electronic properties of BCC tellurium under high pressure
2005
·
F. El Haj Hassan
, A. Hijazi
, et al.
·
Physica B Condensed Matter
·
4
Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors
2002
·
M. Fadlallah
, G. Ghibaudo
, et al.
·
IEEE International Conference on Electronics, Circuits and Systems (ICECS)
·
4
Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors
2001
·
M. Zoaeter
, B. Beydoun
, et al.
·
Active and Passive Electronic Components
·
4
PDF
Show more works
View as search
Works count:
50
Citation count:
492
H-index:
14
I10-index:
16
Year
Topic
Type
