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A. Gnudi

Observed names: A Gnudi, A. GNUDI, A.. Gnudi, Antonio Gnudi, GNUDI, ANTONIO, GNUDI, Antonio, Gnudi A., Gnudi, A., Gnudi, Antonio
Observed institutions: IBM Research - Thomas J. Watson Research Center, Istituto Nazionale di Fisica Nucleare, Sezione di Trieste, STMicroelectronics (Italy), Consorzio Nazionale Interuniversitario per la Nanoelettronica, Texas Instruments (United States), University of Bologna
ORCID: 0000-0002-2186-3468
Observed ORCID: 0000-0002-2186-3468
OpenAlex ID: A5083737379
Theory of the Junctionless Nanowire FET
2011 · Elena Gnani, Antonio Gnudi, et al. · IEEE Transactions on Electron Devices · 254
A new discretization strategy of the semiconductor equations comprising momentum and energy balance
1988 · A. Forghieri, R. Guerrieri, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 166
Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs
2012 · A. Gnudi, S. Reggiani, et al. · IEEE Electron Device Letters · 160
Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
1993 · A. Gnudi, D. Ventura, et al. · Solid-State Electronics · 146
Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors
2013 · Antonio Gnudi, Susanna Reggiani, et al. · IEEE Transactions on Electron Devices · 138
Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation
1992 · A. Gnudi, D. Ventura, et al. · Microelectronic Engineering · 134
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current
2014 · Giovanni Betti Beneventi, Elena Gnani, et al. · IEEE Transactions on Electron Devices · 98
Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end
2006 · F. Agnelli, G. Albasini, et al. · IEEE Circuits and Systems Magazine · 98
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses
2007 · S.. Reggiani, E.. Gnani, et al. · IEEE Transactions on Electron Devices · 95
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation
2008 · Marco Lenzi, Pierpaolo Palestri, et al. · IEEE Transactions on Electron Devices · 93
TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors
2012 · Susanna Reggiani, Gaetano Barone, et al. · IEEE Transactions on Electron Devices · 88
Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors
1992 · D. Ventura, A. Gnudi, et al. · Applied Mathematics Letters · 85
Band-Structure Effects in Ultrascaled Silicon Nanowires
2007 · E. Gnani, S. Reggiani, et al. · IEEE Transactions on Electron Devices · 79
Physical Model of the Junctionless UTB SOI-FET
2012 · Elena Gnani, Antonio Gnudi, et al. · IEEE Transactions on Electron Devices · 60
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
2014 · Giovanni Betti Beneventi, Elena Gnani, et al. · IEEE Transactions on Electron Devices · 58
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications
2014 · Emanuele Baravelli, Elena Gnani, et al. · IEEE Transactions on Electron Devices · 58
Investigation of non‐local transport phenomena in small semiconductor devices
1990 · Antonio Gnudi, Farouk Odeh, et al. · European Transactions on Telecommunications · 56
Optimization of n- and p-type TFETs Integrated on the Same ${\rm InAs}/{\rm Al}_{x}{\rm Ga}_{1-x}{\rm Sb}$ Technology Platform
2013 · Emanuele Baravelli, Elena Gnani, et al. · IEEE Transactions on Electron Devices · 51
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation
2013 · Valerio Di Lecce, Roberto Grassi, et al. · IEEE Transactions on Electron Devices · 49
Numerical simulation of polycrystalline-Silicon MOSFET's
1986 · R. Guerrieri, P. Ciampolini, et al. · IEEE Transactions on Electron Devices · 48
Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model
2013 · E. Gnani, A. Gnudi, et al. · Solid-State Electronics · 45
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors
2011 · Susanna Reggiani, Stefano Poli, et al. · IEEE Transactions on Electron Devices · 44
Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis
2009 · Susanna Reggiani, Giorgio Baccarani, et al. · IEEE Transactions on Electron Devices · 44
Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs
2009 · Roberto Grassi, Stefano Poli, et al. · Solid-State Electronics · 44
Quasi-Ballistic Transport in Nanowire Field-Effect Transistors
2008 · Elena Gnani, Antonio Gnudi, et al. · IEEE Transactions on Electron Devices · 44
Works count: 328
Citation count: 4,447
H-index: 34
I10-index: 108
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