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Author

Madani Labed

Observed names: Labed Madani, Labed, Madani, M Labed, Madani labed
Institution: Sejong University
ORCID: 0000-0003-2608-4452
Observed ORCID: 0000-0003-2608-4452
OpenAlex ID: A5084633258
On the nature of majority and minority traps in β- G a 2 O 3 : A review
2023 · Madani Labed, Nouredine Sengouga, et al. · Materials Today Physics · 89
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Ga2O3-based X-ray detector and scintillators: A review
2023 · Chowdam Venkata Prasad, Madani Labed, et al. · Materials Today Physics · 73
Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes
2024 · Madani Labed, Bo-In Park, et al. · ACS Nano · 62
Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability
2024 · Chowdam Venkata Prasad, Madani Labed, et al. · Materials Today Physics · 43
Modeling a Ni/β-Ga 2 O 3 Schottky barrier diode deposited by confined magnetic-field-based sputtering
2020 · Madani Labed, Nouredine Sengouga, et al. · Journal of Physics D Applied Physics · 41
Low Temperature Modeling of Ni/β-Ga 2 O 3 Schottky Barrier Diode Interface
2021 · Madani Labed, Jun Hui Park, et al. · ACS Applied Electronic Materials · 33
Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
2022 · Chowdam Venkata Prasad, Joon Hui Park, et al. · Materials Today Physics · 32
2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications
2024 · Madani Labed, Ji-Yun Moon, et al. · ACS Nano · 31
Rutile germanium dioxide: An emerging ultrawide bandgap semiconductor for power device applications – A review
2025 · Madani Labed, Ho Jung Jeon, et al. · Materials Today · 26
Overcoming material limitations progresses of gallium oxide for power devices applications: A review
2025 · Madani Labed, Chowdam Venkata Prasad, et al. · Materials Today · 25
Modeling and analyzing temperature-dependent parameters of Ni/ β -Ga 2 O 3 Schottky barrier diode deposited by confined magnetic field-based sputtering
2021 · Madani Labed, Nouredine Sengouga, et al. · Semiconductor Science and Technology · 23
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Leakage Current Modelling and Optimization of β - Ga 2 O 3 Schottky Barrier Diode with Ni Contact under High Reverse Voltage
2020 · Madani Labed, Nouredine Sengouga, et al. · ECS Journal of Solid State Science and Technology · 21
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Study on the improvement of the open-circuit voltage of NiOx/Si heterojunction solar cell
2021 · Madani Labed, Nouredine Sengouga, et al. · Optical Materials · 20
Non-damaging growth and band alignment of p-type NiO/β-Ga 2 O 3 heterojunction diodes for high power applications
2024 · Ji Young Min, Madani Labed, et al. · Journal of Materials Chemistry C · 18
Trap-assisted tunneling in type II Ag2O/β-Ga2O3 self-powered solar blind photodetector
2024 · Madani Labed, Kihwan Kim, et al. · Sensors and Actuators A Physical · 17
Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction
2023 · Madani Labed, Saud Alotaibi, et al. · Applied Physics Letters · 17
Study and optimization of Cu2O/AZO hetero-junction solar cell with different buffer layers
2021 · Khadidja Naceur, Toufik Tibermacine, et al. · Optical Materials · 16
Electrical Performance and Deep-Level Trap Characterization of p-CuGaO2/β-Ga2O3 Heterojunctions for Power Electronics
2025 · Chowdam Venkata Prasad, Geon-Hee Lee, et al. · ACS Applied Materials & Interfaces · 15
Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment
2023 · Chowdam Venkata Prasad, Madani Labed, et al. · Materials Today Advances · 15
Reduction of Fermi-Level Pinning and Controlling of Ni/β-Ga2O3 Schottky Barrier Height Using an Ultrathin HfO2 Interlayer
2023 · Madani Labed, Ji Young Min, et al. · ACS Applied Electronic Materials · 15
Investigation of Deep Defects and Their Effects on the Properties of NiO/Β- Ga2O3 Heterojuncion Diodes
2022 · Abdulaziz Almalki, Labed Madani, et al. · Materials Today Electronics · 15
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Enhancement of silicon solar cell performance by introducing selected defects in the SiO2 passivation layer
2021 · Djemaa Attafi, Amjad Meftah, et al. · Optik · 14
Interface engineering of β-Ga2O3 MOS-type Schottky barrier diode using an ultrathin HfO2 interlayer
2022 · Madani Labed, Ji Young Min, et al. · Surfaces and Interfaces · 13
Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector
2022 · Madani Labed, Hojoong Kim, et al. · Nanomaterials · 13
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Study and optimization of InGaN Schottky solar cell performance
2021 · Amina Benslim, Amjad Meftah, et al. · Optik · 13
Works count: 66
Citation count: 872
H-index: 17
I10-index: 29
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