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Shiqi Liu

Sub-10 nm two-dimensional transistors: Theory and experiment
2021 · Ruge Quhe, Lin Xu, et al. · Physics Reports · 216
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
2021 · Yangyang Wang, Shiqi Liu, et al. · Reports on Progress in Physics · 204
Sub-5 nm Monolayer Arsenene and Antimonene Transistors
2018 · Xiaotian Sun, Zhigang Song, et al. · ACS Applied Materials & Interfaces · 103
Monolayer tellurene–metal contacts
2018 · Jiahuan Yan, Xiuying Zhang, et al. · Journal of Materials Chemistry C · 93
Performance limit of monolayer MoSi 2 N 4 transistors
2021 · Xiaotian Sun, Zhigang Song, et al. · Journal of Materials Chemistry C · 89
Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation
2020 · Yuanyuan Pan, Jingrou Dai, et al. · Physical Review Applied · 84
Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart
2020 · Xiaotian Sun, Lin Xu, et al. · ACS Applied Materials & Interfaces · 82
Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
2021 · Lin Xu, Jie Yang, et al. · ACS Applied Materials & Interfaces · 81
Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions
2018 · Shiqi Liu, Jingzhen Li, et al. · Journal of Materials Chemistry C · 79
Performance Limit of Ultrathin GaAs Transistors
2022 · Qiuhui Li, Shibo Fang, et al. · ACS Applied Materials & Interfaces · 67
Sub-5 nm Gate Length Monolayer MoTe2 Transistors
2021 · Qiang Li, Jie Yang, et al. · The Journal of Physical Chemistry C · 59
Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation
2022 · Shiqi Liu, Qiuhui Li, et al. · Physical Review Applied · 54
Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors
2019 · Yuanyuan Pan, Jihuan Gu, et al. · ACS Applied Nano Materials · 53
n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors
2018 · Bowen Shi, Yangyang Wang, et al. · Physical Chemistry Chemical Physics · 51
Monolayer GaS with high ion mobility and capacity as a promising anode battery material
2019 · Xiuying Zhang, Chen Yang, et al. · Journal of Materials Chemistry A · 48
Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices
2023 · Ying Li, Chunyu Qi, et al. · Physical Review Applied · 39
Layer-Dependent Photoabsorption and Photovoltaic Effects in Two-Dimensional Bi2O2X ( X = S , Se , and Te )
2021 · Hao Tang, Bowen Shi, et al. · Physical Review Applied · 37
Device performance and strain effect of sub-5 nm monolayer InP transistors
2022 · Linqiang Xu, Ruge Quhe, et al. · Journal of Materials Chemistry C · 34
Ferroelectric-Tunable Photoresponse in α- In2Se3 Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study
2023 · Shibo Fang, Chen Yang, et al. · Physical Review Applied · 32
Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface
2019 · Shiqi Liu, Lianqiang Xu, et al. · Advanced Theory and Simulations · 31
Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?
2021 · Shiqi Liu, Jie Yang, et al. · Nanoscale · 30
Improvement of alkali metal ion batteries via interlayer engineering of anodes: from graphite to graphene
2021 · Jiachen Ma, Chen Yang, et al. · Nanoscale · 29
Gate-tunable high magnetoresistance in monolayer Fe 3 GeTe 2 spin valves
2020 · Jie Yang, Ruge Quhe, et al. · Physical Chemistry Chemical Physics · 26
Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces
2019 · Lianqiang Xu, Shiqi Liu, et al. · The Journal of Physical Chemistry C · 26
Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors
2019 · Lin Xu, Yuanyuan Pan, et al. · ACS Applied Nano Materials · 25
Works count: 49
Citation count: 1,879
H-index: 25
I10-index: 35
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