Work

Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

Year: 2019

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.9b00200

Authors: Yuanyuan Pan, Jihuan Gu, Hao Tang, Xiuying Zhang, Jingzhen Li, Bowen Shi, Jie Yang, Han Zhang, Jiahuan Yan, Shiqi Liu, Han Hu, Mingbo Wu, Jing Lu

Institutions: Peking University, China University of Petroleum, East China, State Key Laboratory of Heavy Oil, Collaborative Innovation Center of Quantum Matter

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Ministry of Education of the People's Republic of China, Ministry of Science and Technology of the People's Republic of China, China Postdoctoral Science Foundation, PetroChina Company Limited, Government of Shandong Province

Awards: 模板法构建ZnMn2O4/石油沥青基多孔石墨烯复合材料及其锂电性能研究, G1329379525, G2272589102, 层状黑磷烯的电子性质和输运性质的研究, G2959832409, G4207483116, G5861861397, G6775469550, G7042697203, G7243923209, G8294015650

OpenAlex ID: W2963972458

FWCI: 1.953

Cites: 65

Cited by: 53

Related to: 10