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Jiahuan Yan

Sub 10 nm Bilayer Bi2O2Se Transistors
2019 · Jie Yang, Ruge Quhe, et al. · Advanced Electronic Materials · 103
Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors
2019 · Jiahuan Yan, Hua Pang, et al. · Advanced Electronic Materials · 102
Monolayer tellurene–metal contacts
2018 · Jiahuan Yan, Xiuying Zhang, et al. · Journal of Materials Chemistry C · 93
Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation
2020 · Yuanyuan Pan, Jingrou Dai, et al. · Physical Review Applied · 84
Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions
2018 · Shiqi Liu, Jingzhen Li, et al. · Journal of Materials Chemistry C · 79
Schottky Contact in Monolayer WS2 Field‐Effect Transistors
2019 · Hao Tang, Bowen Shi, et al. · Advanced Theory and Simulations · 70
Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors
2019 · Yuanyuan Pan, Jihuan Gu, et al. · ACS Applied Nano Materials · 53
n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors
2018 · Bowen Shi, Yangyang Wang, et al. · Physical Chemistry Chemical Physics · 51
Monolayer GaS with high ion mobility and capacity as a promising anode battery material
2019 · Xiuying Zhang, Chen Yang, et al. · Journal of Materials Chemistry A · 48
Epitaxial growth and air-stability of monolayer Cu2Te*
2019 · K Qian, L Gao, et al. · Chinese Physics B · 40
Interfacial Properties of Monolayer Antimonene Devices
2019 · Han Zhang, Junhua Xiong, et al. · Physical Review Applied · 34
Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface
2019 · Shiqi Liu, Lianqiang Xu, et al. · Advanced Theory and Simulations · 31
Micro/Nanosphere‐Regulated MXene‐Based Flexible Piezoresistive Sensor with Ultra‐High Sensitivity and Broad Detection Range
2025 · Jiahuan Yan, Siyu Hou, et al. · Small · 29
Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts
2019 · Chen Yang, Xiuying Zhang, et al. · physica status solidi (b) · 29
Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces
2019 · Lianqiang Xu, Shiqi Liu, et al. · The Journal of Physical Chemistry C · 26
Computational Study of Ohmic Contact at Bilayer InSe-Metal Interfaces: Implications for Field-Effect Transistors
2019 · Lin Xu, Yuanyuan Pan, et al. · ACS Applied Nano Materials · 25
n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces
2018 · Ying Guo, Feng Pan, et al. · Physical Chemistry Chemical Physics · 18
First-principles simulation of monolayer hydrogen passivated Bi 2 O 2 S 2 –metal interfaces
2020 · Linqiang Xu, Shiqi Liu, et al. · Physical Chemistry Chemical Physics · 17
Bilayer tellurene–metal interfaces
2019 · Hua Pang, Jiahuan Yan, et al. · Journal of Semiconductors · 13
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Absorption and diffusion of lithium on layered InSe
2019 · Xiuying Zhang, Sibai Li, et al. · Computational Condensed Matter · 10
Sub-5 nm Monolayer BiH Transistors
2019 · Meng Ye, Shiqi Liu, et al. · ACS Applied Electronic Materials · 8
Correction: Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions
2018 · Shiqi Liu, Jingzhen Li, et al. · Journal of Materials Chemistry C · 8
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Electrical transport properties of Ni80Fe20/HCl-PANI composites
2016 · Shanshan Xu, Jiahuan Yan, et al. · Thin Solid Films · 2
On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)
2002 · W.C. Liu, S.Y. Cheng, et al. · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) · 1
Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor
2002 · W.C. Liu, J.Y. Chen, et al. · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) · 1
Works count: 27
Citation count: 975
H-index: 17
I10-index: 20
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