Work

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Year: 2019

Type: article

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.201900226

Authors: Jiahuan Yan, Hua Pang, Lin Xu, Jie Yang, Ruge Quhe, Xiuying Zhang, Yuanyuan Pan, Bowen Shi, Shiqi Liu, Lianqiang Xu, Jinbo Yang, Feng Pan, Zhiyong Zhang, Jing Lu

Institutions: Peking University, Ningxia Normal University, Collaborative Innovation Center of Quantum Matter, Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communications

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Ningxia Province

Awards: G201766149, G4207483116, G6588333113

OpenAlex ID: W2946862728

FWCI: 3.906

Cites: 56

Cited by: 102

Related to: 10