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Francis Baillet

Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications
2005 · Didier Chaussende, Magali Ucar, et al. · Crystal Growth & Design · 45
Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging
2010 · M. Mermoux, A. Crisci, et al. · Journal of Applied Physics · 41
SiC single crystal growth by a modified physical vapor transport technique
2004 · Peter Wellmann, Patrick Desperrier, et al. · Journal of Crystal Growth · 40
Residual strain around grown‐in defects in CVD diamond single crystals: A 2D and 3D Raman imaging study
2011 · Alexandre Crisci, Francis Baillet, et al. · physica status solidi (a) · 36
Cadmium Tolerance and Uptake by a Thiobacillus Ferrooxidans Biomass
1997 · F. Baillet, J. P. Magnin, et al. · Environmental Technology · 34
Continuous Feed Physical Vapor Transport
2003 · D. Chaussende, F. Baillet, et al. · Journal of The Electrochemical Society · 33
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Thermodynamic approach to the vaporization and growth phenomena of SiC ceramics. I. SiC and SiC–SiO2 mixtures under neutral conditions
2011 · G. Honstein, C. Chatillon, et al. · Journal of the European Ceramic Society · 32
Design of experiments to assess the effect of culture parameters on the osteogenic differentiation of human adipose stromal cells
2019 · Mirasbek Kuterbekov, Paul Machillot, et al. · Stem Cell Research & Therapy · 30
Chromium precipitation by the acidophilic bacterium Thiobacillus ferrooxidans
1998 · Francis Baillet, Jean-Pierre Magnin, et al. · Biotechnology Letters · 28
Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach
2017 · Raphaël Boichot, Danying Chen, et al. · Coatings · 17
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Thermodynamic approach to the vaporization and growth phenomena of SiC ceramics. II. The SiC surface under oxidative conditions
2011 · G. Honstein, C. Chatillon, et al. · Journal of the European Ceramic Society · 17
Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process
2006 · D. Chaussende, E. Blanquet, et al. · Chemical Vapor Deposition · 16
Optimization of diode pumped solid state ultraviolet laser dicing of silicon carbide chips using design of experiment methodology
2015 · Guillaume Savriama, Francis Baillet, et al. · Journal of Laser Applications · 13
Augmentation, par régénération électrochimique du substrat, de la production d'une biomasse (thiobacillus ferrooxidans DSM 583) pour un procédé biologique de récupération de métaux
1998 · Jean‐Pierre Magnin, Francis Baillet, et al. · The Canadian Journal of Chemical Engineering · 13
Raman Imaging Analysis of SiC Wafers
2003 · Michel Mermoux, Alexandre Crisci, et al. · Materials science forum · 10
High temperature mass spectrometric study of the vaporization behaviour of SiC–SiO2 system
2007 · Gabriele Honstein, Christian Chatillon, et al. · Journal of Alloys and Compounds · 9
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
2004 · Didier Chaussende, Carole Balloud, et al. · Materials science forum · 8
Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
2004 · Michel Mermoux, Alexandre Crisci, et al. · Materials science forum · 8
Contribution of numerical simulation to silicon carbide bulk growth and epitaxy
2004 · Jérôme Meziere, Michel Pons, et al. · Journal of Physics Condensed Matter · 8
Vaporization of mixed SiC powders. Partial pressures and grain morphology changes under vacuum conditions
2012 · G. Honstein, C. Chatillon, et al. · Journal of the European Ceramic Society · 7
Phase Equilibria, Microstructure and Properties of Novel Mg‐Mn‐Y Alloys
2000 · Alexander Pisch, Caroline Antion, et al. · 6
Mass spectrometric and thermodynamic analyses of (SiC-SiO2) powders vaporization behavior
2012 · G. Honstein, C. Chatillon, et al. · The Journal of Chemical Thermodynamics · 5
Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
2005 · Michel Pons, Elisabeth Blanquet, et al. · Materials science forum · 4
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization
2003 · M Pons, F Baillet, et al. · Applied Surface Science · 4
Vaporization study of SiC and SiC–2 mol% SiO2 powder mixtures. Grain morphology changes at high vapor pressures under pumping
2012 · G. Honstein, F. Baillet, et al. · Journal of the European Ceramic Society · 3
Works count: 64
Citation count: 484
H-index: 13
I10-index: 15
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