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B. Goutiers

Pressure experiments and self-consistent modelling of the transport properties in delta -doped AlGaAs layers
1991 · J Sanchez-Dehesa, D Lavielle, et al. · Semiconductor Science and Technology · 13
Probing the interface fluctuations in semiconductor superlattices using a magneto-transport technique
1994 · F. Aristone, P. Gassot, et al. · Superlattices and Microstructures · 12
Conduction-band structure dependence of persistent photoconductivity in Si-doped AlxGa1−xAs studied by Hall measurements under hydrostatic pressure
1989 · B. Goutiers, G. Gregoris, et al. · Applied Physics Letters · 10
Spatial Correlation of Occupied DX Centres in GaAs and its Destruction by Thermal and Optical Excitation
1993 · L. H. Dmowski, B. Goutiers, et al. · Japanese Journal of Applied Physics · 9
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Scattering mechanisms and warm electrons associated with vertical transport in GAAS/ALAS superlattices
1995 · B. Goutiers, F. Aristone, et al. · Superlattices and Microstructures · 8
Study of Γ, L, and X donor states in Si-doped AlGaAs by pressure dependent Hall measurements
1991 · B. Goutiers, L. Dmowski, et al. · Applied Physics Letters · 6
The (InGa)As-(InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field
1990 · L.A. Cury, A. Celeste, et al. · Superlattices and Microstructures · 6
Study and characterization by magnetophonon resonance of the energy structuring in GaAs/AlAs quantum-wire superlattices
1999 · T. Ferrus, B. Goutiers, et al. · Superlattices and Microstructures · 5
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High Hydrostatic Pressure Effects on Perpendicular Transport in GaAs–AlAs Superlattices
1993 · F. Aristone, A. Sibille, et al. · Japanese Journal of Applied Physics · 4
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Persistent photoconductivity study in very pure InP epilayers
1989 · D Gauthier, B Goutiers, et al. · Semiconductor Science and Technology · 4
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Effect of DX centers in the vertical transport properties of semiconductor superlattices
2000 · F. Aristone, B. Goutiers, et al. · Brazilian Journal of Physics · 3
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Investigation of Shallow States Related to Si-DX Centers in AlGaAs near the \varGamma-X-L Crossover
1993 · B. Goutiers, L. Dmowski, et al. · Japanese Journal of Applied Physics · 3
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GaAsδ-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov–de Haas oscillations
2001 · T. Ferrus, B. Goutiers, et al. · Superlattices and Microstructures · 2
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Optimized minigaps for negative differential resistance creation in strongly δ-doped (1D) superlattices
1999 · T. Ferrus, B. Goutiers, et al. · Superlattices and Microstructures · 2
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Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?
1993 · B. Goutiers, L. Dmowski, et al. · Materials science forum · 2
Short period superlattices under hydrostatic pressure
1996 · P. Gassot, L. Dmowski, et al. · Solid-State Electronics · 1
Time Investigation of Parametric Interactions in Acoustoelectric Oscillators
1977 · J. M. Peransin, E. Groubert, et al. · physica status solidi (a) · 1
Broadening processes in GaAsδ-doped quantum wire superlattices
2001 · T. Ferrus, B. Goutiers, et al. · Superlattices and Microstructures
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Optimized minigaps for negative differential resistance creation in strongly δ-doped (1D) superlattices
1999 · T. Ferrus, B. Goutiers, et al. · Superlattices and Microstructures
Transverse magnetic field effects on the resonant tunneling current
1991 · L. A. Cury, A. Celeste, et al. · Journal de Physique III
DX-Like behavior of Se-impurity centers in gasb under hydrostatic pressure
1990 · K. Zitouni, A. Kadri, et al. · High Pressure Research
Works count: 21
Citation count: 91
H-index: 6
I10-index: 3
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