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Georg Bruederl
Observed names:
Bruederl Georg,
Bruederl, G.,
G Bruederl,
G. BRUEDERL,
G. Bruederl
Observed institutions:
Friedrich-Alexander-Universität Erlangen-Nürnberg,
Osram Opto Semiconductors
OpenAlex ID:
A5086614842
True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN
2010
·
Adrian Avramescu
, Teresa Lermer
, et al.
·
Applied Physics Express
·
141
True green InGaN laser diodes
2010
·
Stephan Lutgen
, Adrian Avramescu
, et al.
·
physica status solidi (a)
·
50
Recent results of blue and green InGaN laser diodes for laser projection
2011
·
Stephan Lutgen
, Dimitri Dini
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
46
Visible GaN laser diodes: from lowest thresholds to highest power levels
2019
·
Harald König
, Muhammad Ali
, et al.
·
Novel In-Plane Semiconductor Lasers
·
32
GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs
2017
·
Uwe Strauss
, Andre Somers
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
26
Disodium bis(o-chloranilato)uranyl(VI) hexahydrate
1994
·
A. Bram
, G. Bruederl
, et al.
·
Acta Crystallographica Section C Crystal Structure Communications
·
15
Measurement of the internal quantum efficiency of InGaN quantum wells
2007
·
A. Laubsch
, M. Sabathil
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
13
10.7 Gb/s WDM Transmission over 100-m SI-POF with Discrete Multitone
2016
·
R. Kruglov
, S. Loquai
, et al.
·
Optical Fiber Communication Conference
·
9
Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications
2007
·
R Singh
, I Radu
, et al.
·
Semiconductor Science and Technology
·
8
InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power
2023
·
Sven Gerhard
, Lars Naehle
, et al.
·
Gallium Nitride Materials and Devices
·
5
Options for cost and performance improvements and integrated emitter design in GaN based electro-optical devices
2025
·
Lars Nähle
, Sven Gerhard
, et al.
·
Light-Emitting Devices, Materials, and Applications
·
4
Recent advances in high power blue laser diodes
2017
·
Muhammad Ali
, Sven Gerhard
, et al.
·
IEEE High Power Diode Lasers and Systems Conference (HPD)
·
3
Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC
2001
·
J. Baur
, U. Strauss
, et al.
·
Journal of Crystal Growth
·
3
47.3: Invited Paper : Recent Progress in Direct Green Lasers for Mobile Image Projectors
2011
·
Adrian Avramescu
, Teresa Lermer
, et al.
·
SID Symposium Digest of Technical Papers
·
2
Blue and green nitride based laser diodes for projection
2013
·
Georg Bruederl
, Thomas Hager
, et al.
·
Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
·
1
Angular resolved far-field dynamics of (Al,In)GaN laser diodes
2020
·
Hassan S. Banayeem
, Matthias Damm
, et al.
·
Gallium Nitride Materials and Devices
青色高出力InGaN半導体レーザダイオード:最適性能と信頼性のためのレーザ棒と単一エミッタの設計最適化【JST・京大機械翻訳】
2020
·
Konig Harald
, Gerhard Sven
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
高出力青色レーザダイオードの最近の進歩【Powered by NICT】
2017
·
Ali Muhammad
, Gerhard Sven
, et al.
·
IEEE Conference Proceedings
An industry perspective on the optimization of InGaN lasers and LEDs via modeling
2011
·
A. Gomez-Iglesias
, M. Sabathil
, et al.
·
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
ChemInform Abstract: Preparation, Structural and Magnetic Properties of Electron‐Doped Infinite‐Layer HTSC Sr1‐xNdxCuO2‐δ.
1993
·
J. MARKL
, M. KAUDA
, et al.
·
ChemInform
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Works count:
21
Citation count:
358
H-index:
8
I10-index:
7
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