Work

Measurement of the internal quantum efficiency of InGaN quantum wells

Year: 2007

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.700829

Authors: A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. T. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Institutions: Osram Opto Semiconductors, Fraunhofer Institute for Applied Solid State Physics, University of Regensburg

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003633192

FWCI: 4.949

Cites: 23

Cited by: 13

Related to: 10