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Ansgar Laubsch

High-Power and High-Efficiency InGaN-Based Light Emitters
2009 · Ansgar Laubsch, Matthias Sabathil, et al. · IEEE Transactions on Electron Devices · 345
On the origin of IQE‐‘droop’ in InGaN LEDs
2009 · Ansgar Laubsch, Matthias Sabathil, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 119
New developments in green LEDs
2009 · Matthias Peter, Ansgar Laubsch, et al. · physica status solidi (a) · 92
Quality and thermal stability of thin InGaN films
2009 · Désirée Queren, Marc Schillgalies, et al. · Journal of Crystal Growth · 65
Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces
2008 · L. Ivanova, S. Borisova, et al. · Applied Physics Letters · 63
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
2010 · Andrey Bakin, Arne Behrends, et al. · Proceedings of the IEEE · 35
Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy
2009 · Ph. Ebert, L. Ivanova, et al. · Applied Physics Letters · 33
Green ThinGaN power‐LED demonstrates 100 lm
2008 · M. Peter, A. Laubsch, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 32
Luminescence properties of thick InGaN quantum‐wells
2009 · Ansgar Laubsch, Werner Bergbauer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 28
Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures
2011 · B. Galler, A. Laubsch, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 23
Self-consistent modeling of resonant PL in InGaN SQW LED-structure
2007 · M. Sabathil, A. Laubsch, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 20
Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy
2009 · A. Laubsch, K. Urban, et al. · Physical Review B · 19
Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion
2011 · B. Galler, M. Sabathil, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 18
Measurement of the internal quantum efficiency of InGaN quantum wells
2007 · A. Laubsch, M. Sabathil, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 13
Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes
2008 · Harald Braun, Dominik Scholz, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
Defect‐related recombination in InGaN‐lasers
2008 · M. Schillgalies, A. Laubsch, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures
2009 · Clemens Vierheilig, Ulrich T. Schwarz, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
Monolitically grown dual wavelength InGaN LEDs for improved CRI
2011 · P. Stauss, M. Mandl, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Recent Progress in High Efficiency InGaN LEDs
2010 · M. Peter, K. Engl, et al. · Conference on Lasers and Electro-Optics · 4
Improving the high-current efficiency of LEDs
2009 · Angsar Laubsch · SPIE Newsroom · 3
Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate
2008 · Tobias Meyer, Harald Braun, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Multi-quantum well emission from blue InGaN-based laser
2008 · M. Schillgalies, A. Laubsch, et al. · IEEE International Semiconductor Laser Conference (ISLC)
Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes
2008 · Werner Bergbauer, FH Deggendorf, et al. · Verhandlungen der Deutschen Physikalischen Gesellschaft
Quantitative modelling of resonant PL in InGaN SQW-LED structure
2007 · M. Sabathil, A. Laubsch, et al. · International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Works count: 25
Citation count: 941
H-index: 13
I10-index: 15
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