Work

Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

Year: 2009

Type: article

Abstract: We investigated the type, spatial distribution, line direction, and electronic properties of dislocations in n-type GaN by scanning tunneling microscopy. We found uncharged perfect dislocations with a/3{1120} Burgers vectors and negatively charged Shockley partial dislocations with a/3{1100} Burgers vectors interconnected by a negatively charged stacking fault. The charges are traced to different charge transfer levels associated with the particular core structure.

Source: Applied Physics Letters

DOI: 10.1063/1.3073741

Authors: Ph. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, M. Dähne

Institutions: Forschungszentrum Jülich, Technische Universität Berlin, Osram Opto Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1980603333

FWCI: 2.871

Cites: 26

Cited by: 33

Related to: 10