Work

Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

Year: 2008

Type: conference-paper

Source: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

DOI: 10.1117/12.781314

Authors: Harald Braun, Dominik Scholz, Tobias Meyer, Ulrich T. Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Institutions: University of Regensburg, Osram Opto Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2060978633

FWCI: 6.203

Cites:

Cited by: 12

Related to: 10