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D.M. Erb
Observed names:
D. Erb,
D. M. Erb,
Darrell Erb
Institution:
Advanced Micro Devices (United States)
Observed institutions:
HRL Laboratories (United States),
Advanced Micro Devices (United States),
Hughes Aircraft (United States)
OpenAlex ID:
A5086822337
Stress modeling of Cu/low-k BEoL - application to stress migration
2004
·
C.J. Zhai
, H.W. Yao
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
30
Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode
1971
·
D.M. Erb
, H.G. Dill
, et al.
·
IEEE Transactions on Electron Devices
·
18
Stratified charge memory
1978
·
D. Erb
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
16
Binary Cu-alloy layers for Cu-interconnections reliability improvement
2001
·
C.P. Wang
, S. Lopatin
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
14
A 64-kbit block addressed charge-coupled memory
1976
·
A.M. Mohsen
, R.W. Bower
, et al.
·
IEEE Journal of Solid-State Circuits
·
14
Calculation of effective dielectric constants for advanced interconnect structures with low-k dielectrics
2003
·
Seung-Hyun Rhee
, Martin D. Radwin
, et al.
·
Applied Physics Letters
·
10
An overlapping electrode buried channel CCD
1973
·
D.M. Erb
, W. Kotyczka
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
8
A 64-kbit block addressed charge-coupled memory
1976
·
A.M. Mohsen
, R.W. Bower
, et al.
·
IEEE Transactions on Electron Devices
·
5
A double-epitaxial process for high-density DRAM trench-capacitor isolation
1987
·
Pau-Ling Chen
, A. Selcuk
, et al.
·
IEEE Electron Device Letters
·
3
A high voltage ion-implanted MOSFET
1971
·
D.M. Erb
, H.G. Dill
·
Technical digest - International Electron Devices Meeting/Technical digest
·
3
A 64K-bit block-addressed charged-coupled memory device
1976
·
A. Mohsen
, R. Bower
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
2
Experimental observation of signal degradation in recirculating charge-coupled devices
1974
·
G. A. Clough
, W. Kotyczka
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
Hi-C isolation of DRAM storage capacitors
1982
·
D.M. Erb
, A. McCombs
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
Electron currents through thick insulators by Schottky injection
1969
·
D.M. Erb
, H.G. Dill
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
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Works count:
14
Citation count:
124
H-index:
7
I10-index:
6
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