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R. Granzner

Observed names: Granzner Ralf, Granzner, Ralf, R Granzner, Ralf Granzner
Institution: X-Fab (Germany)
ORCID: 0000-0001-9492-7453
Observed ORCID: 0000-0001-9492-7453
OpenAlex ID: A5088045843
Two-dimensional materials and their prospects in transistor electronics
2015 · F. Schwierz, J. Pezoldt, et al. · Nanoscale · 728
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Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
2005 · R. Granzner, V.M. Polyakov, et al. · Microelectronic Engineering · 107
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
2003 · Ralf Granzner, V.M Polyakov, et al. · Physica E Low-dimensional Systems and Nanostructures · 60
Graphene Nanoribbons for Electronic Devices
2017 · Zhansong Geng, Bernd Hähnlein, et al. · Annalen der Physik · 56
Theoretical Investigation of Trigate AlGaN/GaN HEMTs
2013 · Mohamed A. Alsharef, Ralf Granzner, et al. · IEEE Transactions on Electron Devices · 49
An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs
2007 · R. Granzner, F. Schwierz, et al. · IEEE Transactions on Electron Devices · 49
Subthreshold behavior of triple-gate MOSFETs on SOI material
2003 · M.C. Lemme, T. Mollenhauer, et al. · Solid-State Electronics · 46
Simulation of 50-nm Gate Graphene Nanoribbon Transistors
2016 · Cedric Nanmeni Bondja, Zhansong Geng, et al. · Electronics · 41
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High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
2015 · Erdin Ture, Peter Bruckner, et al. · IEEE Journal of the Electron Devices Society · 37
Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method
2010 · K. Köhler, S. Müller, et al. · Journal of Applied Physics · 36
Side-gate graphene field-effect transistors with high transconductance
2012 · B. Hähnlein, B. Händel, et al. · Applied Physics Letters · 35
The prospects of transition metal dichalcogenides for ultimately scaled CMOS
2017 · S. Thiele, W. Kinberger, et al. · Solid-State Electronics · 30
Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
2010 · E. Tschumak, R. Granzner, et al. · Applied Physics Letters · 25
RF Performance of Trigate GaN HEMTs
2016 · Mohamed Alsharef, Max Christiansen, et al. · IEEE Transactions on Electron Devices · 22
Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs
2010 · Ralf Granzner, Stefan Thiele, et al. · IEEE Transactions on Electron Devices · 22
First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
2017 · E. Ture, P. Bruckner, et al. · IEEE MTT-S International Microwave Symposium digest · 17
Empirical Model for the Effective Electron Mobility in Silicon Nanowires
2014 · Ralf Granzner, Vladimir M. Polyakov, et al. · IEEE Transactions on Electron Devices · 17
Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrate
2003 · M. Lemme, T. Mollenhauer, et al. · Microelectronic Engineering · 17
The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
2012 · N. Al Mustafa, R. Granzner, et al. · Journal of Applied Physics · 15
Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
2016 · E. Ture, P. Bruckner, et al. · European Microwave Integrated Circuits Conference · 14
Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
2015 · E. Ture, P. Bruckner, et al. · European Microwave Integrated Circuits Conference · 12
Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures
2011 · J. Racko, M. Mikolášek, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 12
Trap-assisted tunnelling current in MIM structures
2010 · Juraj Racko, Miroslav Mikolášek, et al. · Open Physics · 11
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Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression
2020 · Brendan Toner, Markus Frank, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 10
MOSFET scaling: Impact of two-dimensional channel materials
2016 · Ralf Granzner, Zhansong Geng, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 9
Works count: 60
Citation count: 1,558
H-index: 17
I10-index: 24
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