Work

The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures

Year: 2012

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3688219

Authors: N. Al Mustafa, R. Granzner, V. M. Polyakov, J. Racko, M. Mikolášek, J. Breza, F. Schwierz

Institutions: Technische Universität Ilmenau, Fraunhofer Institute for Applied Solid State Physics, Slovak University of Technology in Bratislava

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018704688

FWCI: 1.958

Cites: 19

Cited by: 15

Related to: 10