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Sarah F. Lombardo

Observed names: Lombardo, Sarah F., S. F. Lombardo, S. Lombardo, Sarah F Lombardo, Sarah Lombardo
Observed institutions: Tokyo Electron (Japan), Georgia Institute of Technology, The University of Texas at Dallas, University of California San Diego, University at Albany, State University of New York, Center for Nanoscale Science and Technology
ORCID: 0000-0001-6163-2376
Observed ORCID: 0000-0001-6163-2376
OpenAlex ID: A5088072473
Characterizing Ferroelectric Properties of Hf 0.5 Zr 0.5 O 2 From Deep-Cryogenic Temperature (4 K) to 400 K
2021 · Jae Hur, Yuan-Chun Luo, et al. · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 48
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Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures
2022 · Nujhat Tasneem, Harshil Kashyap, et al. · ACS Applied Materials & Interfaces · 37
Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability
2021 · Nujhat Tasneem, Zheng Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0.5Zr0.5O2 thin film ferroelectric capacitors
2021 · S. F. Lombardo, M. Tian, et al. · Applied Physics Letters · 27
Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)
2020 · S. Lombardo, C. Nelson, et al. · Symposium on VLSI Technology · 26
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Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2
2022 · Kisung Chae, Sarah F. Lombardo, et al. · ACS Applied Materials & Interfaces · 25
Template Matching Approach for Automated Determination of Crystal Phase and Orientation of Grains in 4D-STEM Precession Electron Diffraction Data for Hafnium Zirconium Oxide Ferroelectric Thin Films
2025 · Alain C Diebold, Colin Ophus, et al. · Microscopy and Microanalysis · 24
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Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling
2022 · Gihun Choe, Prasanna Venkatesan Ravindran, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 20
Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages
2023 · Chinsung Park, Harshil Kashyap, et al. · IEEE Transactions on Electron Devices · 12
PbI 2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd) 2 and HI
2022 · Jacob N. Vagott, Kathryn Bairley, et al. · Chemistry of Materials · 10
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Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study
2022 · Nujhat Tasneem, Muhammad M. Islam, et al. · IEEE Transactions on Electron Devices · 10
Reliability of fully-integrated nanoscale ReRAM/CMOS combinations as a function of on-wafer current control
2014 · Karsten Beckmann, Josh Holt, et al. · IEEE International Integrated Reliability Workshop final report · 5
Engineering of ZrO2-based RRAM devices for low power in-memory computing
2024 · Aseel Zeinati, Durga Misra, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 3
Time-Dependent Quantized Conductance Degradation in High-K Switching Devices Treated with H-Plasma
2025 · Aseel Zeinati, Durga Misra, et al. · ECS Meeting Abstracts
A Comparative Study of H-Plasma Treated ZrO2 and HfO2 RRAM Devices for Low Power in-Memory Computing
2025 · Aseel Zeinati, Durgamadhab Misra, et al. · ECS Meeting Abstracts
(Invited) Investigation of Plasma Defect Engineering in ZrO2-Based RRAM Devices for Low Power in-Memory Computing
2024 · Aseel Zeinati, Durgamadhab Misra, et al. · ECS Meeting Abstracts
Engineering High-K Switching Devices for in-Memory Computing
2024 · Aseel Zeinati, Durga Misra, et al. · ECS Meeting Abstracts
Works count: 18
Citation count: 284
H-index: 10
I10-index: 11
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