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Fred Hurkx
Observed names:
F. Hurkx,
Fred A.M. Hurkx
Observed institutions:
NXP (Netherlands),
Philips (Netherlands),
NXP (Belgium)
ORCID:
0000-0001-5734-3301
Observed ORCID:
0000-0001-5734-3301
OpenAlex ID:
A5088313779
Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage
2011
·
SangBum Kim
, Byoungil Lee
, et al.
·
IEEE Transactions on Electron Devices
·
75
Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress
2015
·
Matteo Meneghini
, Isabella Rossetto
, et al.
·
IEEE Transactions on Electron Devices
·
63
Anomalous behavior of surface leakage currents in heavily doped gated-diodes
1993
·
F. Hurkx
, H.L. Peek
, et al.
·
IEEE Transactions on Electron Devices
·
15
The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling
2014
·
Giorgia Longobardi
, Florin Udrea
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
13
Modelling 2DEG charges in AlGaN/GaN heterostructures
2012
·
Giorgia Longobardi
, Florin Udrea
, et al.
·
CAS proceedings
·
9
Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
2012
·
Chiyui Ahn
, Byoungil Lee
, et al.
·
Japanese Journal of Applied Physics
·
9
PDF
The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET — Experiment and TCAD simulations
2014
·
Giorgia Longobardi
, Florin Udrea
, et al.
·
European Solid-State Device Research Conference
·
8
Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes
2017
·
Marcin Hajlasz
, Johan J. T. M. Donkers
, et al.
·
IEEE Transactions on Electron Devices
·
6
Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high‐voltage transistors via measurements and technology computer‐aided design simulations of transfer characteristics of metal–insulator–semiconductor field‐effect transistors and high‐electron‐mobility transistors
2015
·
Giorgia Longobardi
, Florin Udrea
, et al.
·
IET Power Electronics
·
3
A Monte Carlo technique to investigate signal delays of advanced Si BJT's up to high currents
2002
·
P. Palestri
, L. Selmi
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
2
Poly-ridge emitter transistor (FRET): simple low-power option to a bipolar process
2002
·
W. van der Wel
, R. Koster
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
An improved formula for the deflection of light by a massive object
2020
·
Fred Hurkx
·
European Journal of Physics
Memory retention of doped SbTe phase change line cells measured isothermally and isochronally
2010
·
Jasper L.M. Oosthoek
, Bart J. Kooi
, et al.
·
MRS Proceedings
Design and analyses of bias current circuits for operation at output voltages above BV/sub CEO/
2004
·
H. Veenstra
, F. Hurkx
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
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Works count:
14
Citation count:
204
H-index:
7
I10-index:
4
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