Author

R. Marrakh

Observed name: R Marrakh

Institutions: Université Hassan II Mohammedia, University of Hassan II Casablanca

Observed institutions: Université Hassan II Mohammedia, University of Hassan II Casablanca

OpenAlex ID: A5088409174

Modeling of the threshold voltage variation for a stressed submicronic MOSFET

2001 · A. Bouhdada, R. Marrakh · International Conference on Microelectronics (ICM) · 6

Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration

2003 · A Bouhdada, R Marrakh, et al. · Microelectronics Reliability · 5

Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects

2000 · A. Bouhdada, R. Marrakh · Active and Passive Electronic Components · 3

Modeling of Interface Defect Distribution for an n‐MOSFETs Under Hot‐Carrier Stressing

2000 · R. Marrakh, A. Bouhdada · Active and Passive Electronic Components · 3

Impact of the Stress on the Sub‐Micron N‐Metal Oxide Semiconductor Field Effect Transistor Characteristics

2001 · R. Marrakh, A. Bouhdada · Active and Passive Electronic Components · 2

Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents

1999 · A. Bouhdada, A. Nouacry, et al. · Microelectronics Journal · 2

Influence of the defects on the I-V characteristics for LDD-nMOSFETs

2003 · A. Bouhdada, R. Marrakh · IEEE International Conference on Microelectronics (MIEL)

Modeling of the I–V Characteristics for LDD‐nMOSFETs in Relation with Defects Induced by Hot‐Carrier Injection

2002 · R. Marrakh, A. Bouhdada · Active and Passive Electronic Components

Modelling of the surface potential evolution for a stressed submicronic MOSFET

2000 · R. Marrakh, A. Bouhdada · Microelectronics Journal

Works count: 9

Citation count: 21

H-index: 3

I10-index: