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Dawid Kot

Observed names: D. Kot, Kot, D., Kot, Dawid, Kot, Dawid 1982-
ORCID: 0000-0002-7857-5416
Observed ORCID: 0000-0002-7857-5416
OpenAlex ID: A5088628506
Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon
2015 · G. Kissinger, D. Kot, et al. · ECS Journal of Solid State Science and Technology · 26
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Investigation of the Composition of the Si/SiO2Interface in Oxide Precipitates and Oxide Layers on Silicon by STEM/EELS
2017 · G. Kissinger, M. A. Schubert, et al. · ECS Journal of Solid State Science and Technology · 18
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Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM
2014 · D. Kot, G. Kissinger, et al. · ECS Journal of Solid State Science and Technology · 18
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Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon
2008 · Gudrun Kissinger, Dawid Kot, et al. · ECS Transactions · 18
Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon
2012 · D. Kot, T. Mchedlidze, et al. · ECS Journal of Solid State Science and Technology · 17
Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers
2017 · D. Kot, G. Kissinger, et al. · ECS Journal of Solid State Science and Technology · 13
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Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon
2016 · G. Kissinger, J. Dabrowski, et al. · Journal of Crystal Growth · 13
Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy
2015 · Dawid Kot, Gudrun Kissinger, et al. · physica status solidi (RRL) - Rapid Research Letters · 12
Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen
2012 · G. Kissinger, D. Kot, et al. · ECS Journal of Solid State Science and Technology · 12
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Modeling the Early Stages of Oxygen Agglomeration
2011 · G. Kissinger, J. Dabrowski, et al. · Journal of The Electrochemical Society · 12
Development of a Storage Getter Test for Cu Contaminations in Silicon Wafers Based on ToF-SIMS Measurements
2014 · D. Kot, G. Kissinger, et al. · Acta Physica Polonica A · 11
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Oxygen diffusivity in silicon derived from dynamical X-ray diffraction
2013 · J. Will, A. Gröschel, et al. · Journal of Applied Physics · 11
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Morphology of oxygen precipitates in silicon wafers pre-treated by rapid thermal annealing
2014 · D. Kot, G. Kissinger, et al. · Applied Physics Letters · 9
The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers
2008 · Dawid Kot, Gudrun Kissinger, et al. · ECS Transactions · 9
Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination
2020 · G. Kissinger, D. Kot, et al. · ECS Journal of Solid State Science and Technology · 8
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Getter Effects in Low Oxygen and High Oxygen Czochralski Silicon Wafers
2010 · Gudrun Kissinger, Dawid Kot, et al. · ECS Transactions · 8
Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers
2013 · Dawid Kot, Gudrun Kissinger, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 7
Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers
2009 · Dawid Kot, Gudrun Kissinger, et al. · ECS Transactions · 7
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The effects of short-term air exposure of the monocrystal HfSe2 surface
2025 · Katarzyna Kwiecień, Jan Raczyński, et al. · Applied Surface Science · 6
On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon
2019 · G. Kissinger, D. Kot, et al. · ECS Journal of Solid State Science and Technology · 6
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Mid-infrared optical characterization of thin SiNx membranes
2019 · M. Stocchi, D. Mencarelli, et al. · Applied Optics · 5
On the Impact of Strained PECVD Nitride Layers on Oxide Precipitate Nucleation in Silicon
2019 · G. Kissinger, D. Kot, et al. · ECS Journal of Solid State Science and Technology · 5
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VOn Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy
2018 · D. Kot, G. Kissinger, et al. · ECS Journal of Solid State Science and Technology · 5
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Study on defect annealing potential and bulk micro defect formation using high temperature RTA conditions for Cz‐grown silicon
2017 · Timo Müller, Michael Gehmlich, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
About the influence of deposited nitride layers on oxide precipitation after RTA pre‐treatment
2017 · Gudrun Kissinger, Dawid Kot, et al. · physica status solidi (a) · 5
Works count: 71
Citation count: 325
H-index: 11
I10-index: 12
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