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Daiki Wakimoto

Observed names: D. Wakimoto, Wakimoto, Daiki
ORCID: 0000-0002-9248-393X
Observed ORCID: 0000-0002-9248-393X
OpenAlex ID: A5088684002
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
2017 · Kelson D. Chabak, Jonathan P. McCandless, et al. · IEEE Electron Device Letters · 274
First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes
2017 · Kohei Sasaki, Daiki Wakimoto, et al. · IEEE Electron Device Letters · 241
Depletion-mode vertical Ga2O3trench MOSFETs fabricated using Ga2O3homoepitaxial films grown by halide vapor phase epitaxy
2017 · Kohei Sasaki, Quang Tu Thieu, et al. · Applied Physics Express · 82
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Surface states on (001) oriented β -Ga2O3 epilayers, their origin, and their effect on the electrical properties of Schottky barrier diodes
2020 · R. Lingaparthi, Q. T. Thieu, et al. · Applied Physics Letters · 46
Preparation of 2-in.-diameter (001) β-Ga 2 O 3 homoepitaxial wafers by halide vapor phase epitaxy
2017 · Quang Tu Thieu, Daiki Wakimoto, et al. · Japanese Journal of Applied Physics · 43
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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
2018 · Marko J. Tadjer, Andrew D. Koehler, et al. · Applied Physics Letters · 37
A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV
2025 · Daiki Wakimoto, Chia-Hung Lin, et al. · Applied Physics Express · 36
Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1
2023 · Daiki Wakimoto, Chia-Hung Lin, et al. · Applied Physics Express · 35
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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
2021 · Marko J. Tadjer, Kohei Sasaki, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 24
Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes
2018 · Akio Takatsuka, Kohei Sasaki, et al. · Conference digest · 19
X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias
2022 · Yongzhao Yao, Daiki Wakimoto, et al. · Scripta Materialia · 16
Three-dimensional visualization of lattice defects in β -Ga2O3 via synchrotron-radiation Borrmann-effect X-ray topo-tomography
2026 · Yongzhao Yao, Daiki Katsube, et al. · Applied Physics Letters · 2
Demonstration of Ga2O3 trench MOS-type Schottky barrier diodes
2017 · K. Sasaki, D. Wakimoto, et al. · Conference digest · 2
Supplementary Movie 2
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · Figshare
Supplementary Movie 1
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · Figshare
Three-dimensional visualization of lattice defects in β-Ga2O3 via synchrotron-radiation Borrmann-effect X-ray topo-tomography
2026 · YAO, Yongzhao, Ishikawa, Yukari, et al. · AIP Publishing
Supplementary Figure 1
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · AIP Publishing
Supplementary Movie 5
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · Figshare
Supplementary Movie 6
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · Figshare
Supplementary Movie 4
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · Figshare
Supplementary Movie 3
2026 · YAO, Yongzhao, Katsube, Daiki, et al. · Figshare
Three-dimensional visualization of lattice defects in $β$-Ga$_2$O$_3$ via synchrotron-radiation Borrmann-effect X-ray topo-tomography
2026 · Yao, Yongzhao, Katsube, Daiki, et al. · arXiv (Cornell University)
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Ga 2 O 3 trench MOSFETs fabricated using Ga 2 O 3 films grown by HVPE
2018 · Kohei Sasaki, Quang Tu Thieu, et al. · The Japan Society of Applied Physics
Ultra-Low-Loss Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes
2017 · Kohei Sasaki, Quang Tu Thieu, et al. · The Japan Society of Applied Physics
Ga 2 O 3 JBS Diodes Using p-Type NiO
2017 · Kohei Sasaki, Quang Tu Thieu, et al. · The Japan Society of Applied Physics
Works count: 28
Citation count: 857
H-index: 11
I10-index: 11
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