Author

Robert G. Dandrea

Observed names: R. G. Dandrea, R.G. Dandrea

Observed institutions: Lawrence Livermore National Laboratory, National Laboratory of the Rockies, Cornell University, Xerox (United States)

OpenAlex ID: A5088992923

Metals physics at ultrahigh pressure: Aluminum, copper, and lead as prototypes

1988 · W. J. Nellis, J. A. Moriarty, et al. · Physical Review Letters · 256

Electron liquid at any degeneracy

1986 · R. G. Dandrea, N. W. Ashcroft, et al. · Physical review. B, Condensed matter · 128

First-principles study of the electronic structure of γ-InSe and β-InSe

1993 · P. Gomes da Costa, R. G. Dandrea, et al. · Physical review. B, Condensed matter · 117

First-principles calculation of the three-dimensional band structure of poly(phenylene vinylene)

1993 · P. Gomes da Costa, R. G. Dandrea, et al. · Physical review. B, Condensed matter · 115

Stability and band offsets of heterovalent superlattices: Si/GaP, Ge/GaAs, and Si/GaAs

1990 · R. G. Dandrea, Sverre Froyen, et al. · Physical review. B, Condensed matter · 79

Stability of coherently strained semiconductor superlattices

1990 · R. G. Dandrea, J. E. Bernard, et al. · Physical Review Letters · 72

Interfacial atomic structure and band offsets at semiconductor heterojunctions

1992 · R. G. Dandrea, C. B. Duke, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 68

Ordering in semiconductor alloys

1990 · J. E. Bernard, R. G. Dandrea, et al. · Applied Physics Letters · 53

Design of ohmic contacts to p-ZnSe

1994 · R. G. Dandrea, C. B. Duke · Applied Physics Letters · 45

First-principles study of intervalley mixing: Ultrathin GaAs/GaP superlattices

1991 · Robert G. Dandrea, Alex Zunger · Physical review. B, Condensed matter · 41

Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations

1993 · R. G. Dandrea, C. B. Duke · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 36

Interfacial atomic composition and Schottky barrier heights at the Al/GaAs(001) interface

1993 · R. G. Dandrea, C. B. Duke · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 36

Prediction of direct band gaps in monolayer (001) and (111) GaAs/GaP superlattices

1990 · Robert G. Dandrea, Alex Zunger · Applied Physics Letters · 23

Calculation of InAs/AlSb(001) band offsets: Effect of strain and interfacial atomic structure

1993 · R. G. Dandrea, C. B. Duke · Applied Physics Letters · 21

High pressure as a probe of electron structure: Aluminum

1985 · R. G. Dandrea, N. W. Ashcroft · Physical review. B, Condensed matter · 21

Strain-induced interdiffusion at semiconductor interfaces

1992 · R. G. Dandrea, C. B. Duke · Physical review. B, Condensed matter · 18

Local density functional calculation of the three-dimensional band structure of poly (phenylene vinylene) (PPV) and comparison with photoemission data

1993 · P. Gomes da Costa, R.G. Dandrea, et al. · Synthetic Metals · 9

Aluminum at T ≈ Tf : Theory of the Dynamically Compressed Metallic State

1984 · R. G. Dandrea, N. W. Ashcroft · Le Journal de Physique Colloques · 1