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Jeong Yong Yang

Observed names: J.Y. Yang, Jeongyong Yang
ORCID: 0000-0002-8887-5295
Observed ORCID: 0000-0002-8887-5295
OpenAlex ID: A5089878294
Reconfigurable Physical Reservoir in GaN/α-In 2 Se 3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
2023 · Jeong Yong Yang, Minseong Park, et al. · ACS Nano · 57
Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs
2021 · Yeong Je Jeong, Jeong Yong Yang, et al. · Applied Surface Science · 51
Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric
2023 · Jeong Yong Yang, Seung Yoon Oh, et al. · IEEE Electron Device Letters · 46
An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP 2 S 6 /GaN HEMT
2023 · Minseong Park, Jeong Yong Yang, et al. · Science Advances · 37
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Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
2022 · Yeong Je Jeong, Ji-Hyeon Park, et al. · Applied Physics Express · 35
Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors
2023 · Ha Young Kang, Min Jae Yeom, et al. · Materials Today Physics · 29
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure
2022 · Jeong Yong Yang, Min Jae Yeom, et al. · Advanced Electronic Materials · 26
Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors
2021 · Jeong Yong Yang, Jiyeon Ma, et al. · IEEE Transactions on Electron Devices · 26
ALD grown polycrystalline HfO2 dielectric layer on (−2 0 1) β-Ga2O3 for MOS capacitors
2020 · J.Y. Yang, J. Ma, et al. · Results in Physics · 22
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Network of artificial olfactory receptors for spatiotemporal monitoring of toxic gas
2024 · Yongmin Baek, Byungjoon Bae, et al. · Science Advances · 21
Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control
2021 · Jeong Yong Yang, Min Jae Yeom, et al. · Advanced Electronic Materials · 21
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric
2021 · Min Jae Yeom, Jeong Yong Yang, et al. · Micromachines · 16
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Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack
2021 · Chan Ho Lee, Jeong Yong Yang, et al. · IEEE Journal of the Electron Devices Society · 14
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Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors
2024 · Jongho Ji, Jeong Yong Yang, et al. · Communications Engineering · 13
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Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study
2020 · Tae Ho Park, Jeong Yong Yang, et al. · Journal of the Korean Physical Society · 4
A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors
2023 · Yeong Je Jeong, Chan Ho Lee, et al. · physica status solidi (a) · 3
Steep Slope GaN MOS-HEMTs with Ferroelectric Semiconductor Heterostructure
2022 · Jeong Yong Yang, Min Jae Yeom, et al. · International Conference on Solid State Devices and Materials (SSDM)
A comparative study of charge trapping effect in p-type MoTe 2 and WSe 2 FETs using pulsed current–voltage measurements
2020 · Jeong Yong Yang, Chan Ho Lee, et al. · Japanese Journal of Applied Physics
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Works count: 18
Citation count: 421
H-index: 13
I10-index: 14
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